JPS57162372A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS57162372A JPS57162372A JP56046898A JP4689881A JPS57162372A JP S57162372 A JPS57162372 A JP S57162372A JP 56046898 A JP56046898 A JP 56046898A JP 4689881 A JP4689881 A JP 4689881A JP S57162372 A JPS57162372 A JP S57162372A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- depletion layer
- radiation
- radiation detector
- semiconductor radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve the position resolution of a radiation intensity by forming an electrode forming a depletion layer and an electrode forming no depletion layer insulated from the previous electrode on both main surfaces of a semiconductor substrate, thereby improving the sensitivity of radiation. CONSTITUTION:An electrodes 12, 14 for producing a depletion layer and aluminum electrodes 13, 15 for not producing a depletion layer are formed on both main surfaces of an n type Si substrate 11, the electrodes 13, 15 are grounded, and the electrodes 12, 14 are connected to one of I/V converters 16. In this manner, the sensitivity against the radiation can be improved, thereby improving the position resolution of the radiation intensity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56046898A JPS57162372A (en) | 1981-03-30 | 1981-03-30 | Semiconductor radiation detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56046898A JPS57162372A (en) | 1981-03-30 | 1981-03-30 | Semiconductor radiation detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57162372A true JPS57162372A (en) | 1982-10-06 |
JPS6161708B2 JPS6161708B2 (en) | 1986-12-26 |
Family
ID=12760176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56046898A Granted JPS57162372A (en) | 1981-03-30 | 1981-03-30 | Semiconductor radiation detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57162372A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138486A (en) * | 1987-11-25 | 1989-05-31 | Matsushita Electric Ind Co Ltd | Multichannel type semiconductor radiation detector |
FR2849272A1 (en) * | 2002-12-19 | 2004-06-25 | Commissariat Energie Atomique | Device for photo-electric detection, in particular for X-rays and gamma-radiation, comprises pixel electrodes and inter-pixel zones situated at two different levels |
WO2007022955A1 (en) * | 2005-08-22 | 2007-03-01 | Conergy Ag | Solar cell |
JP2007071602A (en) * | 2005-09-05 | 2007-03-22 | Kyoto Univ | Radiation detector |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137065U (en) * | 1988-03-15 | 1989-09-19 | ||
JPH03116649A (en) * | 1989-09-29 | 1991-05-17 | Ushio Inc | Heater lamp |
-
1981
- 1981-03-30 JP JP56046898A patent/JPS57162372A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138486A (en) * | 1987-11-25 | 1989-05-31 | Matsushita Electric Ind Co Ltd | Multichannel type semiconductor radiation detector |
FR2849272A1 (en) * | 2002-12-19 | 2004-06-25 | Commissariat Energie Atomique | Device for photo-electric detection, in particular for X-rays and gamma-radiation, comprises pixel electrodes and inter-pixel zones situated at two different levels |
WO2004066402A1 (en) * | 2002-12-19 | 2004-08-05 | Commissariat A L'energie Atomique | Device for photoelectric detection and in particular of x or gamma radiation |
US7034311B2 (en) | 2002-12-19 | 2006-04-25 | Commissariat A L'energie Atomique | Device for photoelectric detection and in particular of x or y radiation |
WO2007022955A1 (en) * | 2005-08-22 | 2007-03-01 | Conergy Ag | Solar cell |
JP2007071602A (en) * | 2005-09-05 | 2007-03-22 | Kyoto Univ | Radiation detector |
Also Published As
Publication number | Publication date |
---|---|
JPS6161708B2 (en) | 1986-12-26 |
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