JPS57162372A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS57162372A
JPS57162372A JP56046898A JP4689881A JPS57162372A JP S57162372 A JPS57162372 A JP S57162372A JP 56046898 A JP56046898 A JP 56046898A JP 4689881 A JP4689881 A JP 4689881A JP S57162372 A JPS57162372 A JP S57162372A
Authority
JP
Japan
Prior art keywords
electrodes
depletion layer
radiation
radiation detector
semiconductor radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56046898A
Other languages
Japanese (ja)
Other versions
JPS6161708B2 (en
Inventor
Yujiro Naruse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56046898A priority Critical patent/JPS57162372A/en
Publication of JPS57162372A publication Critical patent/JPS57162372A/en
Publication of JPS6161708B2 publication Critical patent/JPS6161708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the position resolution of a radiation intensity by forming an electrode forming a depletion layer and an electrode forming no depletion layer insulated from the previous electrode on both main surfaces of a semiconductor substrate, thereby improving the sensitivity of radiation. CONSTITUTION:An electrodes 12, 14 for producing a depletion layer and aluminum electrodes 13, 15 for not producing a depletion layer are formed on both main surfaces of an n type Si substrate 11, the electrodes 13, 15 are grounded, and the electrodes 12, 14 are connected to one of I/V converters 16. In this manner, the sensitivity against the radiation can be improved, thereby improving the position resolution of the radiation intensity.
JP56046898A 1981-03-30 1981-03-30 Semiconductor radiation detector Granted JPS57162372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56046898A JPS57162372A (en) 1981-03-30 1981-03-30 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56046898A JPS57162372A (en) 1981-03-30 1981-03-30 Semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS57162372A true JPS57162372A (en) 1982-10-06
JPS6161708B2 JPS6161708B2 (en) 1986-12-26

Family

ID=12760176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56046898A Granted JPS57162372A (en) 1981-03-30 1981-03-30 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS57162372A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138486A (en) * 1987-11-25 1989-05-31 Matsushita Electric Ind Co Ltd Multichannel type semiconductor radiation detector
FR2849272A1 (en) * 2002-12-19 2004-06-25 Commissariat Energie Atomique Device for photo-electric detection, in particular for X-rays and gamma-radiation, comprises pixel electrodes and inter-pixel zones situated at two different levels
WO2007022955A1 (en) * 2005-08-22 2007-03-01 Conergy Ag Solar cell
JP2007071602A (en) * 2005-09-05 2007-03-22 Kyoto Univ Radiation detector

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137065U (en) * 1988-03-15 1989-09-19
JPH03116649A (en) * 1989-09-29 1991-05-17 Ushio Inc Heater lamp

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138486A (en) * 1987-11-25 1989-05-31 Matsushita Electric Ind Co Ltd Multichannel type semiconductor radiation detector
FR2849272A1 (en) * 2002-12-19 2004-06-25 Commissariat Energie Atomique Device for photo-electric detection, in particular for X-rays and gamma-radiation, comprises pixel electrodes and inter-pixel zones situated at two different levels
WO2004066402A1 (en) * 2002-12-19 2004-08-05 Commissariat A L'energie Atomique Device for photoelectric detection and in particular of x or gamma radiation
US7034311B2 (en) 2002-12-19 2006-04-25 Commissariat A L'energie Atomique Device for photoelectric detection and in particular of x or y radiation
WO2007022955A1 (en) * 2005-08-22 2007-03-01 Conergy Ag Solar cell
JP2007071602A (en) * 2005-09-05 2007-03-22 Kyoto Univ Radiation detector

Also Published As

Publication number Publication date
JPS6161708B2 (en) 1986-12-26

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