JPS5694788A - Semiconductor light detection device - Google Patents

Semiconductor light detection device

Info

Publication number
JPS5694788A
JPS5694788A JP17187179A JP17187179A JPS5694788A JP S5694788 A JPS5694788 A JP S5694788A JP 17187179 A JP17187179 A JP 17187179A JP 17187179 A JP17187179 A JP 17187179A JP S5694788 A JPS5694788 A JP S5694788A
Authority
JP
Japan
Prior art keywords
light receiving
light
receiving element
aluminum
coating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17187179A
Other languages
Japanese (ja)
Inventor
Hitoshi Teshigahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17187179A priority Critical patent/JPS5694788A/en
Publication of JPS5694788A publication Critical patent/JPS5694788A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To make a ratio of a light receiving element output against a light receiving area a constant value by a method wherein a surplus component due to the incident light at the periphery of a light receiving surface is eliminated from the output of a light receiving element. CONSTITUTION:A part excluding the peripheral area of an original light receiving plane 10 and aluminum electrodes 6, 7 is taken as a light shielding coating film 11 and it is formed with aluminum along with the aluminium electrodes 6, 7 simultaneously. With this constitution, an incident light to the original light recieving plane 10 is shielded with the light shielding coating film 11, as a esult, generation of surplus component of the light receiving element output can be eliminated and a ratio of the light receiving element output against a light receiving area can be made a constant value. The above-mentioned light shielding coating film 11 can be formed with aluminum at a part excluding the original light receiving plane 10 on an insulating coated film which is installed after the aluminum electrodes 6, 7 are formed.
JP17187179A 1979-12-28 1979-12-28 Semiconductor light detection device Pending JPS5694788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17187179A JPS5694788A (en) 1979-12-28 1979-12-28 Semiconductor light detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17187179A JPS5694788A (en) 1979-12-28 1979-12-28 Semiconductor light detection device

Publications (1)

Publication Number Publication Date
JPS5694788A true JPS5694788A (en) 1981-07-31

Family

ID=15931330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17187179A Pending JPS5694788A (en) 1979-12-28 1979-12-28 Semiconductor light detection device

Country Status (1)

Country Link
JP (1) JPS5694788A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58109267U (en) * 1982-01-20 1983-07-25 三洋電機株式会社 semiconductor optical sensor
JPH09257685A (en) * 1996-03-26 1997-10-03 Horiba Ltd Photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58109267U (en) * 1982-01-20 1983-07-25 三洋電機株式会社 semiconductor optical sensor
JPH09257685A (en) * 1996-03-26 1997-10-03 Horiba Ltd Photodetector

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