JPS5568676A - Junction type field effect semiconductor device - Google Patents

Junction type field effect semiconductor device

Info

Publication number
JPS5568676A
JPS5568676A JP14191378A JP14191378A JPS5568676A JP S5568676 A JPS5568676 A JP S5568676A JP 14191378 A JP14191378 A JP 14191378A JP 14191378 A JP14191378 A JP 14191378A JP S5568676 A JPS5568676 A JP S5568676A
Authority
JP
Japan
Prior art keywords
layers
layer
type
films
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14191378A
Other languages
Japanese (ja)
Inventor
Kuniyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14191378A priority Critical patent/JPS5568676A/en
Publication of JPS5568676A publication Critical patent/JPS5568676A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To accelerate the operation of a junction type field effect semiconductor device by surrounding part of a channel region under a source electrode pickup region by a polycrystalline gate region containing impurity to thereby reduce the capacity between the gate and the source thereof.
CONSTITUTION: An n--type layer 202 is epitaxially grown on an N+-type silicon substrate 201, polycrystalline silicon layers 203 and 203' are selectively formed thereon, an n--type layer 204 is epitaxially grown on the entire surface including them, and polycrystalline silicon layers 205 and 205' are formed on the layers 203 and 203', respectively. Then, mask layers 206, 206', 206" of Si3N4 are selectively formed on the layer 204, p+-type polycrystalline layers 207 and 207" are diffused in the layers 205 and 205', respectively, and a p+-type layer 208 is diffused in the layer 204 making contact with the layer 207. Then, the masks 206' and 206" are removed therefrom, SiO2 films 210 and 210' are grown on the entire surface thereof, the residual mask 206 is removed and heat treated, thick SiO2 films 211 and 211' are formed on the layers 207 and 207', and thick SiO2 film 212 is formed on the layer 204. Thereafter these films are used as masks to diffuse an n+-type layer 213 therein.
COPYRIGHT: (C)1980,JPO&Japio
JP14191378A 1978-11-17 1978-11-17 Junction type field effect semiconductor device Pending JPS5568676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14191378A JPS5568676A (en) 1978-11-17 1978-11-17 Junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14191378A JPS5568676A (en) 1978-11-17 1978-11-17 Junction type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5568676A true JPS5568676A (en) 1980-05-23

Family

ID=15303070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14191378A Pending JPS5568676A (en) 1978-11-17 1978-11-17 Junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5568676A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49121488A (en) * 1973-03-20 1974-11-20
JPS5084180A (en) * 1973-11-27 1975-07-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49121488A (en) * 1973-03-20 1974-11-20
JPS5084180A (en) * 1973-11-27 1975-07-07

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