JPS5466077A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5466077A
JPS5466077A JP13265177A JP13265177A JPS5466077A JP S5466077 A JPS5466077 A JP S5466077A JP 13265177 A JP13265177 A JP 13265177A JP 13265177 A JP13265177 A JP 13265177A JP S5466077 A JPS5466077 A JP S5466077A
Authority
JP
Japan
Prior art keywords
film
layer
poly
sio
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13265177A
Other languages
Japanese (ja)
Inventor
Masashi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13265177A priority Critical patent/JPS5466077A/en
Publication of JPS5466077A publication Critical patent/JPS5466077A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To make it possible to use a thin poly-crystal layer with the oxidation of the poly-crystal layer suppressed and to improve integration, by providing an oxidation preventive film of Si3N4 onto the polycrystal layer at the time of the generation of a SiO2 film after mesa-etching the poly-crystal Si layer grown as a gate electrode on a Si substrate.
CONSTITUTION: On P-type Si substrate 1, SiO2 gate insulation film 2 and poly- crystal Si layer 3 as a gate electrode layer are stacked, and impurities are doped to decrease its specific resistance. On this layer, Si3N4 film 8 is adhered via thin SiO2 film 9, and photo resist film 10 is used as a mask for mesa-etching and then removed. Then, remaining film 8 is used as a mask to diffusion-forming N-type drain region 4 and N-type source region 5, and SiO2 film 6 is generated on the entire surface through a heat treatment. At this time, since film 8 works for oxidation prevention, film 6 or poly-crystal layer 3 exposed at the mesa flank does not become thick, but thin. The integration degree of a IGFET to generated is therefore improved.
COPYRIGHT: (C)1979,JPO&Japio
JP13265177A 1977-11-04 1977-11-04 Semiconductor device and its manufacture Pending JPS5466077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13265177A JPS5466077A (en) 1977-11-04 1977-11-04 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13265177A JPS5466077A (en) 1977-11-04 1977-11-04 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5466077A true JPS5466077A (en) 1979-05-28

Family

ID=15086296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13265177A Pending JPS5466077A (en) 1977-11-04 1977-11-04 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5466077A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107674A (en) * 1981-12-22 1983-06-27 Fujitsu Ltd Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5066182A (en) * 1973-10-12 1975-06-04
JPS525276A (en) * 1975-07-02 1977-01-14 Hitachi Ltd Silicon gate mos semi-conductor production
JPS5291382A (en) * 1976-01-26 1977-08-01 Nec Corp Insulating gate type field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5066182A (en) * 1973-10-12 1975-06-04
JPS525276A (en) * 1975-07-02 1977-01-14 Hitachi Ltd Silicon gate mos semi-conductor production
JPS5291382A (en) * 1976-01-26 1977-08-01 Nec Corp Insulating gate type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107674A (en) * 1981-12-22 1983-06-27 Fujitsu Ltd Manufacture of semiconductor device

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