JPS525276A - Silicon gate mos semi-conductor production - Google Patents
Silicon gate mos semi-conductor productionInfo
- Publication number
- JPS525276A JPS525276A JP8086075A JP8086075A JPS525276A JP S525276 A JPS525276 A JP S525276A JP 8086075 A JP8086075 A JP 8086075A JP 8086075 A JP8086075 A JP 8086075A JP S525276 A JPS525276 A JP S525276A
- Authority
- JP
- Japan
- Prior art keywords
- silicon gate
- gate mos
- conductor production
- mos semi
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent the wire disconnection caused by the difference in level of electrode and wire, and the effect of metal ion in oxide film by coating silicon gate MOSFET using flat surface phosphorus silicate glass.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8086075A JPS525276A (en) | 1975-07-02 | 1975-07-02 | Silicon gate mos semi-conductor production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8086075A JPS525276A (en) | 1975-07-02 | 1975-07-02 | Silicon gate mos semi-conductor production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS525276A true JPS525276A (en) | 1977-01-14 |
Family
ID=13730081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8086075A Pending JPS525276A (en) | 1975-07-02 | 1975-07-02 | Silicon gate mos semi-conductor production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS525276A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5466077A (en) * | 1977-11-04 | 1979-05-28 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
JPS5599779A (en) * | 1979-01-24 | 1980-07-30 | Siemens Ag | Method of fabricating integrated mos circuit |
-
1975
- 1975-07-02 JP JP8086075A patent/JPS525276A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5466077A (en) * | 1977-11-04 | 1979-05-28 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
JPS5599779A (en) * | 1979-01-24 | 1980-07-30 | Siemens Ag | Method of fabricating integrated mos circuit |
JPH0235461B2 (en) * | 1979-01-24 | 1990-08-10 | Siemens Ag |
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