JPS525276A - Silicon gate mos semi-conductor production - Google Patents

Silicon gate mos semi-conductor production

Info

Publication number
JPS525276A
JPS525276A JP8086075A JP8086075A JPS525276A JP S525276 A JPS525276 A JP S525276A JP 8086075 A JP8086075 A JP 8086075A JP 8086075 A JP8086075 A JP 8086075A JP S525276 A JPS525276 A JP S525276A
Authority
JP
Japan
Prior art keywords
silicon gate
gate mos
conductor production
mos semi
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8086075A
Other languages
Japanese (ja)
Inventor
Norio Anzai
Yasutake Kuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8086075A priority Critical patent/JPS525276A/en
Publication of JPS525276A publication Critical patent/JPS525276A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the wire disconnection caused by the difference in level of electrode and wire, and the effect of metal ion in oxide film by coating silicon gate MOSFET using flat surface phosphorus silicate glass.
COPYRIGHT: (C)1977,JPO&Japio
JP8086075A 1975-07-02 1975-07-02 Silicon gate mos semi-conductor production Pending JPS525276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8086075A JPS525276A (en) 1975-07-02 1975-07-02 Silicon gate mos semi-conductor production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8086075A JPS525276A (en) 1975-07-02 1975-07-02 Silicon gate mos semi-conductor production

Publications (1)

Publication Number Publication Date
JPS525276A true JPS525276A (en) 1977-01-14

Family

ID=13730081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8086075A Pending JPS525276A (en) 1975-07-02 1975-07-02 Silicon gate mos semi-conductor production

Country Status (1)

Country Link
JP (1) JPS525276A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466077A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPS5599779A (en) * 1979-01-24 1980-07-30 Siemens Ag Method of fabricating integrated mos circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466077A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPS5599779A (en) * 1979-01-24 1980-07-30 Siemens Ag Method of fabricating integrated mos circuit
JPH0235461B2 (en) * 1979-01-24 1990-08-10 Siemens Ag

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