JPS5264276A - Silicon planar type semiconductor element - Google Patents

Silicon planar type semiconductor element

Info

Publication number
JPS5264276A
JPS5264276A JP13983775A JP13983775A JPS5264276A JP S5264276 A JPS5264276 A JP S5264276A JP 13983775 A JP13983775 A JP 13983775A JP 13983775 A JP13983775 A JP 13983775A JP S5264276 A JPS5264276 A JP S5264276A
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor element
planar type
silicon planar
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13983775A
Other languages
Japanese (ja)
Inventor
Kimii Sumino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13983775A priority Critical patent/JPS5264276A/en
Publication of JPS5264276A publication Critical patent/JPS5264276A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To suppress the effect of plus ions in an SiO2 film and improve dielectric strength.
COPYRIGHT: (C)1977,JPO&Japio
JP13983775A 1975-11-21 1975-11-21 Silicon planar type semiconductor element Pending JPS5264276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13983775A JPS5264276A (en) 1975-11-21 1975-11-21 Silicon planar type semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13983775A JPS5264276A (en) 1975-11-21 1975-11-21 Silicon planar type semiconductor element

Publications (1)

Publication Number Publication Date
JPS5264276A true JPS5264276A (en) 1977-05-27

Family

ID=15254646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13983775A Pending JPS5264276A (en) 1975-11-21 1975-11-21 Silicon planar type semiconductor element

Country Status (1)

Country Link
JP (1) JPS5264276A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
US5264380A (en) * 1989-12-18 1993-11-23 Motorola, Inc. Method of making an MOS transistor having improved transconductance and short channel characteristics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
US5264380A (en) * 1989-12-18 1993-11-23 Motorola, Inc. Method of making an MOS transistor having improved transconductance and short channel characteristics

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