JPS51135477A - Manufacturing method of semiconductor devices - Google Patents
Manufacturing method of semiconductor devicesInfo
- Publication number
- JPS51135477A JPS51135477A JP6033975A JP6033975A JPS51135477A JP S51135477 A JPS51135477 A JP S51135477A JP 6033975 A JP6033975 A JP 6033975A JP 6033975 A JP6033975 A JP 6033975A JP S51135477 A JPS51135477 A JP S51135477A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor devices
- gate
- stabilization
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: Stabilization of the threshold voltage of Si3N4-SiO2 double structure gate film in manufacturing Si gate MOST.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6033975A JPS51135477A (en) | 1975-05-20 | 1975-05-20 | Manufacturing method of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6033975A JPS51135477A (en) | 1975-05-20 | 1975-05-20 | Manufacturing method of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51135477A true JPS51135477A (en) | 1976-11-24 |
Family
ID=13139294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6033975A Pending JPS51135477A (en) | 1975-05-20 | 1975-05-20 | Manufacturing method of semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51135477A (en) |
-
1975
- 1975-05-20 JP JP6033975A patent/JPS51135477A/en active Pending
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