JPS54129881A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54129881A JPS54129881A JP3748778A JP3748778A JPS54129881A JP S54129881 A JPS54129881 A JP S54129881A JP 3748778 A JP3748778 A JP 3748778A JP 3748778 A JP3748778 A JP 3748778A JP S54129881 A JPS54129881 A JP S54129881A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- film
- mesa
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To prevent the re-diffusion of impurity, by reducing the heat treatment time to obtain the SiO2 layer, through the diffusion of P type impurity at the mesa wall of the mesa type semiconductor element, converting the region including it into perforated Si layer with anodic reaction, and changing further it into the SiO2 layer.
CONSTITUTION: On the P+ type Si substrate 1, the P- type layer 2 is epitaxial grown, and N+ type layer 3 is diffused and the Si3N4 film 4 is placed on the specified region on it. Further, the P+ type layer 5 is formed by diffusion at the mesa wall produced with mesa etching by taking the film 4 as a mask, and the substrate 1 is taken as the anode to cause anodic reaction to convert the layer 5 into the layer 6 in hydrofluoric acid solution. In this case, since the reaction speed of P type is ten times faster than that of N type, the reaction can be in a short time of 1 to 2 minutes. After that, the liquid silicon compound solved into alcohol is coated on the layer 6, it is heat treated at about 500°C under O2 atmosphere, the layer 6 is changed into the SiO2 film 7, the film 4 is removed, and the electrode 8 is attached to here and the electrode 9 is to the rear side of the substrate 1.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3748778A JPS54129881A (en) | 1978-03-30 | 1978-03-30 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3748778A JPS54129881A (en) | 1978-03-30 | 1978-03-30 | Manufacture for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54129881A true JPS54129881A (en) | 1979-10-08 |
Family
ID=12498869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3748778A Pending JPS54129881A (en) | 1978-03-30 | 1978-03-30 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54129881A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009534819A (en) * | 2006-04-19 | 2009-09-24 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Microfabricated device with through-wafer connection and corresponding manufacturing method |
-
1978
- 1978-03-30 JP JP3748778A patent/JPS54129881A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009534819A (en) * | 2006-04-19 | 2009-09-24 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Microfabricated device with through-wafer connection and corresponding manufacturing method |
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