JPS5544772A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5544772A
JPS5544772A JP11879578A JP11879578A JPS5544772A JP S5544772 A JPS5544772 A JP S5544772A JP 11879578 A JP11879578 A JP 11879578A JP 11879578 A JP11879578 A JP 11879578A JP S5544772 A JPS5544772 A JP S5544772A
Authority
JP
Japan
Prior art keywords
substrate
torr
diffusion
film
spattering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11879578A
Other languages
Japanese (ja)
Other versions
JPS5939898B2 (en
Inventor
Tatsuo Miyazaki
Masami Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11879578A priority Critical patent/JPS5939898B2/en
Publication of JPS5544772A publication Critical patent/JPS5544772A/en
Publication of JPS5939898B2 publication Critical patent/JPS5939898B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To raise reproducibility within lots or between lots by etching a semiconductor substrate in the vacuum or inactive gas fixed below 10-2 Torr before cutting down lifetime by diffusing Au or Pt for example in the substrate.
CONSTITUTION: Such treatment preliminary to Au diffusion is made of the Si substrate 1 on which P-N junction has been formed, as usually-adopted chemical cleaning, oxide film 2 removal of fluoric acid and fluoric acid removal by water washing. Next, the film 2' is removed etching-removed by inversely spattering in the Ar atmosphere fixed at 10-3 Torr the substrate 1 having undesirably-formed several 10's-of -100Å SiO2 film 2'. Thereafter, Au.Si-layer 4 is generated by spattering and sintering Au 3 in the Ar atmosphere fixed at 10-3 Torr. Au diffusion range 5 is formed by continuing Au diffusion at 850° for 20 minutes for cutting down lifetime.
COPYRIGHT: (C)1980,JPO&Japio
JP11879578A 1978-09-26 1978-09-26 Manufacturing method of semiconductor device Expired JPS5939898B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11879578A JPS5939898B2 (en) 1978-09-26 1978-09-26 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11879578A JPS5939898B2 (en) 1978-09-26 1978-09-26 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5544772A true JPS5544772A (en) 1980-03-29
JPS5939898B2 JPS5939898B2 (en) 1984-09-27

Family

ID=14745288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11879578A Expired JPS5939898B2 (en) 1978-09-26 1978-09-26 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5939898B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138926A (en) * 1989-09-21 1991-06-13 Internatl Rectifier Corp Diffusion method of white gold
US5387545A (en) * 1990-12-20 1995-02-07 Hitachi, Ltd. Impurity diffusion method
WO2012042856A1 (en) * 2010-09-28 2012-04-05 富士電機株式会社 Method for producing semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138926A (en) * 1989-09-21 1991-06-13 Internatl Rectifier Corp Diffusion method of white gold
US5387545A (en) * 1990-12-20 1995-02-07 Hitachi, Ltd. Impurity diffusion method
WO2012042856A1 (en) * 2010-09-28 2012-04-05 富士電機株式会社 Method for producing semiconductor device
JPWO2012042856A1 (en) * 2010-09-28 2014-02-06 富士電機株式会社 Manufacturing method of semiconductor device
JP5716750B2 (en) * 2010-09-28 2015-05-13 富士電機株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS5939898B2 (en) 1984-09-27

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