JPS5544772A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS5544772A JPS5544772A JP11879578A JP11879578A JPS5544772A JP S5544772 A JPS5544772 A JP S5544772A JP 11879578 A JP11879578 A JP 11879578A JP 11879578 A JP11879578 A JP 11879578A JP S5544772 A JPS5544772 A JP S5544772A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- torr
- diffusion
- film
- spattering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To raise reproducibility within lots or between lots by etching a semiconductor substrate in the vacuum or inactive gas fixed below 10-2 Torr before cutting down lifetime by diffusing Au or Pt for example in the substrate.
CONSTITUTION: Such treatment preliminary to Au diffusion is made of the Si substrate 1 on which P-N junction has been formed, as usually-adopted chemical cleaning, oxide film 2 removal of fluoric acid and fluoric acid removal by water washing. Next, the film 2' is removed etching-removed by inversely spattering in the Ar atmosphere fixed at 10-3 Torr the substrate 1 having undesirably-formed several 10's-of -100Å SiO2 film 2'. Thereafter, Au.Si-layer 4 is generated by spattering and sintering Au 3 in the Ar atmosphere fixed at 10-3 Torr. Au diffusion range 5 is formed by continuing Au diffusion at 850° for 20 minutes for cutting down lifetime.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11879578A JPS5939898B2 (en) | 1978-09-26 | 1978-09-26 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11879578A JPS5939898B2 (en) | 1978-09-26 | 1978-09-26 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5544772A true JPS5544772A (en) | 1980-03-29 |
JPS5939898B2 JPS5939898B2 (en) | 1984-09-27 |
Family
ID=14745288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11879578A Expired JPS5939898B2 (en) | 1978-09-26 | 1978-09-26 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5939898B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138926A (en) * | 1989-09-21 | 1991-06-13 | Internatl Rectifier Corp | Diffusion method of white gold |
US5387545A (en) * | 1990-12-20 | 1995-02-07 | Hitachi, Ltd. | Impurity diffusion method |
WO2012042856A1 (en) * | 2010-09-28 | 2012-04-05 | 富士電機株式会社 | Method for producing semiconductor device |
-
1978
- 1978-09-26 JP JP11879578A patent/JPS5939898B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138926A (en) * | 1989-09-21 | 1991-06-13 | Internatl Rectifier Corp | Diffusion method of white gold |
US5387545A (en) * | 1990-12-20 | 1995-02-07 | Hitachi, Ltd. | Impurity diffusion method |
WO2012042856A1 (en) * | 2010-09-28 | 2012-04-05 | 富士電機株式会社 | Method for producing semiconductor device |
JPWO2012042856A1 (en) * | 2010-09-28 | 2014-02-06 | 富士電機株式会社 | Manufacturing method of semiconductor device |
JP5716750B2 (en) * | 2010-09-28 | 2015-05-13 | 富士電機株式会社 | Manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5939898B2 (en) | 1984-09-27 |
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