JPS553633A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS553633A
JPS553633A JP7500678A JP7500678A JPS553633A JP S553633 A JPS553633 A JP S553633A JP 7500678 A JP7500678 A JP 7500678A JP 7500678 A JP7500678 A JP 7500678A JP S553633 A JPS553633 A JP S553633A
Authority
JP
Japan
Prior art keywords
substrate
sides
diffusion
electrode
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7500678A
Other languages
Japanese (ja)
Other versions
JPS5757860B2 (en
Inventor
Takayuki Minamimori
Akio Suzuki
Nobuo Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7500678A priority Critical patent/JPS553633A/en
Publication of JPS553633A publication Critical patent/JPS553633A/en
Publication of JPS5757860B2 publication Critical patent/JPS5757860B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

PURPOSE: To obtain solar cells having excellent characteristics in the low illumination-intensity environment by cutting the diffusion layer formed on the surface and the sides of a semiconductor substrate at the edge of outer peripheral of the substrate by mechanical abrasing or chemical etching.
CONSTITUTION: A doped oxide film 2 is coated on the surface and the sides of an Si substrate 1 and heat treatment is made. Then, diffusion layers 3 and 3" are formed on the surface and sides, respectively, and at the same time a thin diffusion layer 3' is formed on the back. Then, with the film 2 which is condensed by the diffusion treatment remained, the peripheral edge 4 is mechanically or chemically removed so that the connection between diffusion layers 3 and 3" is cut out, and a processed alteration layer 5 caused on the edge 4 is removed by immersing it in an etching tank 7 containing NaOH solution 6. Then the film 2 is removed, and a surface electrode 8 comprising Ti, Pd, and Ag is attached to the surface, and a back electrode 9 comprising Ti, Pd, and Ag is attached to the back if the substrate 1 is P type. Then heat treatment is made to diffuse Al of the electrode 9, and a P+ type layer 10 is provided.
COPYRIGHT: (C)1980,JPO&Japio
JP7500678A 1978-06-20 1978-06-20 Manufacturing semiconductor device Granted JPS553633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7500678A JPS553633A (en) 1978-06-20 1978-06-20 Manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7500678A JPS553633A (en) 1978-06-20 1978-06-20 Manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS553633A true JPS553633A (en) 1980-01-11
JPS5757860B2 JPS5757860B2 (en) 1982-12-07

Family

ID=13563671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7500678A Granted JPS553633A (en) 1978-06-20 1978-06-20 Manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS553633A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02100319A (en) * 1988-10-07 1990-04-12 Fujitsu Ltd Manufacture of semiconductor device
EP0625803A1 (en) * 1993-05-19 1994-11-23 Hewlett-Packard GmbH Photodiode structure
WO2008093488A1 (en) * 2007-01-31 2008-08-07 Shin-Etsu Handotai Co., Ltd. Silicon wafer beveling device, silicon wafer manufacturing method, and etched silicon wafer
JP2010232466A (en) * 2009-03-27 2010-10-14 Sanyo Electric Co Ltd Solar cell module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02100319A (en) * 1988-10-07 1990-04-12 Fujitsu Ltd Manufacture of semiconductor device
EP0625803A1 (en) * 1993-05-19 1994-11-23 Hewlett-Packard GmbH Photodiode structure
US5430321A (en) * 1993-05-19 1995-07-04 Hewlett-Packard Company Photodiode structure
WO2008093488A1 (en) * 2007-01-31 2008-08-07 Shin-Etsu Handotai Co., Ltd. Silicon wafer beveling device, silicon wafer manufacturing method, and etched silicon wafer
US8454852B2 (en) 2007-01-31 2013-06-04 Shin-Etsu Handotai Co., Ltd. Chamfering apparatus for silicon wafer, method for producing silicon wafer, and etched silicon wafer
JP2010232466A (en) * 2009-03-27 2010-10-14 Sanyo Electric Co Ltd Solar cell module

Also Published As

Publication number Publication date
JPS5757860B2 (en) 1982-12-07

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