JPS5792872A - Diode - Google Patents
DiodeInfo
- Publication number
- JPS5792872A JPS5792872A JP17066380A JP17066380A JPS5792872A JP S5792872 A JPS5792872 A JP S5792872A JP 17066380 A JP17066380 A JP 17066380A JP 17066380 A JP17066380 A JP 17066380A JP S5792872 A JPS5792872 A JP S5792872A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diode
- heat treatment
- thickness
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000011084 recovery Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a diode with a long inverse recovery time by a method wherein a thickness of a high density layer is regulated in accordance with the kind of metal of a backside electrode and a heat treatment temperature, so that diffusion of the metal into a low density substrate is avoided. CONSTITUTION:N<+> layer 2 are formed by diffusion from both sides of an n<-> type Si substrate and one of the layers 2 is removed by polishing, so that a specular surface is obtained, SiO23 is formed on the specular surface and an aperture 4 is made and a p<+> diffused layer 5 and an SiO2 thin film 6 are formed. An aperture is made in the film 6 and an Au electrode 7 is formed. Then the n<+> layer 2 of the backside is made thinner by etching and an Au electrode 8 is formed and a diode is completed after heat treatment. If the thickness of the n<+> layer 2 is determined in such a manner that Au is not diffused into the n<-> substrate 1 by the heat treatment at 380-400 deg.C, a diode with a long inverse recovery time is obtained and a required recovery time can be obtained in accordance with the thickness of the layer 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17066380A JPS5792872A (en) | 1980-12-01 | 1980-12-01 | Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17066380A JPS5792872A (en) | 1980-12-01 | 1980-12-01 | Diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5792872A true JPS5792872A (en) | 1982-06-09 |
Family
ID=15909059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17066380A Pending JPS5792872A (en) | 1980-12-01 | 1980-12-01 | Diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01262671A (en) * | 1988-04-14 | 1989-10-19 | Sanyo Electric Co Ltd | Pin diode and manufacture thereof |
-
1980
- 1980-12-01 JP JP17066380A patent/JPS5792872A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01262671A (en) * | 1988-04-14 | 1989-10-19 | Sanyo Electric Co Ltd | Pin diode and manufacture thereof |
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