JPS57160180A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57160180A
JPS57160180A JP56046077A JP4607781A JPS57160180A JP S57160180 A JPS57160180 A JP S57160180A JP 56046077 A JP56046077 A JP 56046077A JP 4607781 A JP4607781 A JP 4607781A JP S57160180 A JPS57160180 A JP S57160180A
Authority
JP
Japan
Prior art keywords
layer
film
photoresist film
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56046077A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Shusaku Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56046077A priority Critical patent/JPS57160180A/en
Publication of JPS57160180A publication Critical patent/JPS57160180A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

PURPOSE:To accelerate the removal of a photoresist film, by reducing the thickness of an Au layer formed on the photoresist film to the same as that of a Cr layer formed thereunder or less. CONSTITUTION:The photoresist film 12 is applied on a substrate 11 to form the Cr layer 13 on the film 12 and the Au layer with same or less thickness of the layer 13 on the layer 13. Next, the film 12 and the metallic part on the film 12 are partly removed, and the substrate 11 having these double layers is immersed in photoresist film removing liquid. Because the Cr layer 13 warps upward by said treatment, the removing liquid is permeated into the film 12 with good efficiency.
JP56046077A 1981-03-27 1981-03-27 Manufacture of semiconductor device Pending JPS57160180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56046077A JPS57160180A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56046077A JPS57160180A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57160180A true JPS57160180A (en) 1982-10-02

Family

ID=12736925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56046077A Pending JPS57160180A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57160180A (en)

Similar Documents

Publication Publication Date Title
ATE7337T1 (en) LAMINATION PROCESS.
JPS57160180A (en) Manufacture of semiconductor device
JPS55108790A (en) Semiconductor luminous device
ATE18471T1 (en) LAMINATION PROCESS.
JPS5420671A (en) Production of semiconductor devices
JPS5232671A (en) Manufacturing process of semiconductor device
JPS5760277A (en) Solar cell for wrist watch
JPS57136349A (en) Semiconductor device
JPS5716170A (en) Etching method of etching anisotropic wafer
JPS5346272A (en) Impurity diffusion method
JPS5227391A (en) Contact forming method of semiconductor device
KR880011907A (en) Method of Forming Wiring Layer in Semiconductor Device
JPS5513911A (en) Division method of semiconductor wafer
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS57118641A (en) Lifting-off method
JPS52117550A (en) Electrode formation method
JPS56155396A (en) Heat conductive surface
JPS5336180A (en) Production of semiconductor device
JPS56120141A (en) Semiconductor device
JPS5329676A (en) Gas treating method of semiconductor wafers
JPS5537229A (en) Lapping method of wafer
JPS57176729A (en) Forming method for pattern
JPS5546574A (en) Contact exposure photomask
JPS5690539A (en) Production of semiconductor device
JPS6449231A (en) Manufacture of semiconductor device