JPS5546574A - Contact exposure photomask - Google Patents

Contact exposure photomask

Info

Publication number
JPS5546574A
JPS5546574A JP12074378A JP12074378A JPS5546574A JP S5546574 A JPS5546574 A JP S5546574A JP 12074378 A JP12074378 A JP 12074378A JP 12074378 A JP12074378 A JP 12074378A JP S5546574 A JPS5546574 A JP S5546574A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
substrate
degassing
grooves
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12074378A
Other languages
Japanese (ja)
Inventor
Okimitsu Yasuda
Takahiro Torii
Toshio Anami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12074378A priority Critical patent/JPS5546574A/en
Publication of JPS5546574A publication Critical patent/JPS5546574A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To improve the contact of exposure photomast with semiconductor wafer by forming a plurality of degassing grooves in a substrate exposed with opaque layers when predetermined pattern of opaque layers are coated on one surface of a light transmissive substrate as a photomask.
CONSTITUTION: Opaque layers 12 are coated in approx. 0.1μm thick according to predetermined pattern using chromium, chromium oxide, iron oxide or the like on a light transmissive substrate 11 such as glass plate. Then, a plurality of degassing grooves 13 are perforated at suitable interval in the substrate 11 exposed at the layers 12 side. The grooves 13 have a width of larger than 5μm or a depth of larger than 3μm and a length from one to the other ends of a semiconductor wafer. Thus, degassing can be rapidly and completely conducted to thereby improve the contact of the semiconductor wafer on the photomask to thus obtain precisely fine pattern.
COPYRIGHT: (C)1980,JPO&Japio
JP12074378A 1978-09-30 1978-09-30 Contact exposure photomask Pending JPS5546574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12074378A JPS5546574A (en) 1978-09-30 1978-09-30 Contact exposure photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12074378A JPS5546574A (en) 1978-09-30 1978-09-30 Contact exposure photomask

Publications (1)

Publication Number Publication Date
JPS5546574A true JPS5546574A (en) 1980-04-01

Family

ID=14793878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12074378A Pending JPS5546574A (en) 1978-09-30 1978-09-30 Contact exposure photomask

Country Status (1)

Country Link
JP (1) JPS5546574A (en)

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