JPS55138858A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS55138858A
JPS55138858A JP4778379A JP4778379A JPS55138858A JP S55138858 A JPS55138858 A JP S55138858A JP 4778379 A JP4778379 A JP 4778379A JP 4778379 A JP4778379 A JP 4778379A JP S55138858 A JPS55138858 A JP S55138858A
Authority
JP
Japan
Prior art keywords
layer
substrate
semiconductor device
impurity region
corroded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4778379A
Other languages
Japanese (ja)
Inventor
Masahiko Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4778379A priority Critical patent/JPS55138858A/en
Publication of JPS55138858A publication Critical patent/JPS55138858A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent an electric leakage of a semiconductor device by forming a thin film layer which is not corroded at etching time in the boundary portion between a high density impurity region and a thick silicon oxide layer and forming an ohmic contact between the impurity region and the metallic wire. CONSTITUTION:A thin film layer 6 which is not corroded by the etching solution of a thick silicon oxide film 2 is formed on a monocrystalline silicon substrate 1, and other portion of the layer 2 is so removed as to retain a part of the layer 6 in the boundary portion between the substrate 1 and the film 2. Then, a high density impurity region 3 is formed in the substrate, an insulating film 4 is formed thereon, a metallic wire 5 is then coated through the opening so as to obtain a semiconductor device having an ohmic contact with the substrate 1.
JP4778379A 1979-04-17 1979-04-17 Semiconductor device and method of fabricating the same Pending JPS55138858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4778379A JPS55138858A (en) 1979-04-17 1979-04-17 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4778379A JPS55138858A (en) 1979-04-17 1979-04-17 Semiconductor device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS55138858A true JPS55138858A (en) 1980-10-30

Family

ID=12784964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4778379A Pending JPS55138858A (en) 1979-04-17 1979-04-17 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55138858A (en)

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