JPS55138858A - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the sameInfo
- Publication number
- JPS55138858A JPS55138858A JP4778379A JP4778379A JPS55138858A JP S55138858 A JPS55138858 A JP S55138858A JP 4778379 A JP4778379 A JP 4778379A JP 4778379 A JP4778379 A JP 4778379A JP S55138858 A JPS55138858 A JP S55138858A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- semiconductor device
- impurity region
- corroded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent an electric leakage of a semiconductor device by forming a thin film layer which is not corroded at etching time in the boundary portion between a high density impurity region and a thick silicon oxide layer and forming an ohmic contact between the impurity region and the metallic wire. CONSTITUTION:A thin film layer 6 which is not corroded by the etching solution of a thick silicon oxide film 2 is formed on a monocrystalline silicon substrate 1, and other portion of the layer 2 is so removed as to retain a part of the layer 6 in the boundary portion between the substrate 1 and the film 2. Then, a high density impurity region 3 is formed in the substrate, an insulating film 4 is formed thereon, a metallic wire 5 is then coated through the opening so as to obtain a semiconductor device having an ohmic contact with the substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4778379A JPS55138858A (en) | 1979-04-17 | 1979-04-17 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4778379A JPS55138858A (en) | 1979-04-17 | 1979-04-17 | Semiconductor device and method of fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55138858A true JPS55138858A (en) | 1980-10-30 |
Family
ID=12784964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4778379A Pending JPS55138858A (en) | 1979-04-17 | 1979-04-17 | Semiconductor device and method of fabricating the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138858A (en) |
-
1979
- 1979-04-17 JP JP4778379A patent/JPS55138858A/en active Pending
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