JPS5361271A - Diffusion method for high concentration impurity - Google Patents

Diffusion method for high concentration impurity

Info

Publication number
JPS5361271A
JPS5361271A JP13535276A JP13535276A JPS5361271A JP S5361271 A JPS5361271 A JP S5361271A JP 13535276 A JP13535276 A JP 13535276A JP 13535276 A JP13535276 A JP 13535276A JP S5361271 A JPS5361271 A JP S5361271A
Authority
JP
Japan
Prior art keywords
high concentration
concentration impurity
diffusion method
oxide film
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13535276A
Other languages
Japanese (ja)
Other versions
JPS5522937B2 (en
Inventor
Toshiaki Kitahara
Keizo Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13535276A priority Critical patent/JPS5361271A/en
Publication of JPS5361271A publication Critical patent/JPS5361271A/en
Publication of JPS5522937B2 publication Critical patent/JPS5522937B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent an oxide film from roughing during high concentration diffusing of phosphorus by depositing a high concentration impurity on the surface of a semiconductor, thereafter removing the oxide film including this impurity, making primary diffusion in a dry atmosphere, then removing the oxide film and making secondary diffusion in wet O2.
COPYRIGHT: (C)1978,JPO&Japio
JP13535276A 1976-11-12 1976-11-12 Diffusion method for high concentration impurity Granted JPS5361271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13535276A JPS5361271A (en) 1976-11-12 1976-11-12 Diffusion method for high concentration impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13535276A JPS5361271A (en) 1976-11-12 1976-11-12 Diffusion method for high concentration impurity

Publications (2)

Publication Number Publication Date
JPS5361271A true JPS5361271A (en) 1978-06-01
JPS5522937B2 JPS5522937B2 (en) 1980-06-19

Family

ID=15149740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13535276A Granted JPS5361271A (en) 1976-11-12 1976-11-12 Diffusion method for high concentration impurity

Country Status (1)

Country Link
JP (1) JPS5361271A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867820A (en) * 2015-04-16 2015-08-26 株洲南车时代电气股份有限公司 Method for preparing high-concentration N-type shallow junction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867820A (en) * 2015-04-16 2015-08-26 株洲南车时代电气股份有限公司 Method for preparing high-concentration N-type shallow junction

Also Published As

Publication number Publication date
JPS5522937B2 (en) 1980-06-19

Similar Documents

Publication Publication Date Title
JPS56160034A (en) Impurity diffusion
JPS5361271A (en) Diffusion method for high concentration impurity
JPS53147481A (en) Semiconductor device and production of the same
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5247677A (en) Process for production of semiconductor device
JPS51113461A (en) A method for manufacturing semiconductor devices
JPS5373075A (en) Treatment method for wafer surface
JPS533171A (en) Impurity diffusion method
JPS538082A (en) Production of semiconductor device
JPS5559778A (en) Method of fabricating semiconductor device
JPS559425A (en) Manufacturing method for semiconductor device
JPS5378780A (en) Preparation for semiconductor device
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS57173956A (en) Manufacture of semiconductor device
JPS5367362A (en) Manufacture of semiconductor device
JPS51117573A (en) Manufacturing method of semiconductor
JPS5379372A (en) Production of silicon semoconductor device
JPS5568635A (en) Stabilizing method of semiconductor surface
JPS5422157A (en) Formation method of selective impurity diffusion region into iii-v group compound semiconductor
JPS51120174A (en) Method of manufacturing semiconductors
JPS53136478A (en) Manufacture for semiconductor device
JPS522291A (en) Method of making semiconductor device
JPS5317064A (en) Impurity diffusion method
JPS5527683A (en) Manufacturing method of semiconductor device
JPS5244165A (en) Process for production of semiconductor device