JPS5361271A - Diffusion method for high concentration impurity - Google Patents
Diffusion method for high concentration impurityInfo
- Publication number
- JPS5361271A JPS5361271A JP13535276A JP13535276A JPS5361271A JP S5361271 A JPS5361271 A JP S5361271A JP 13535276 A JP13535276 A JP 13535276A JP 13535276 A JP13535276 A JP 13535276A JP S5361271 A JPS5361271 A JP S5361271A
- Authority
- JP
- Japan
- Prior art keywords
- high concentration
- concentration impurity
- diffusion method
- oxide film
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent an oxide film from roughing during high concentration diffusing of phosphorus by depositing a high concentration impurity on the surface of a semiconductor, thereafter removing the oxide film including this impurity, making primary diffusion in a dry atmosphere, then removing the oxide film and making secondary diffusion in wet O2.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13535276A JPS5361271A (en) | 1976-11-12 | 1976-11-12 | Diffusion method for high concentration impurity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13535276A JPS5361271A (en) | 1976-11-12 | 1976-11-12 | Diffusion method for high concentration impurity |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5361271A true JPS5361271A (en) | 1978-06-01 |
JPS5522937B2 JPS5522937B2 (en) | 1980-06-19 |
Family
ID=15149740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13535276A Granted JPS5361271A (en) | 1976-11-12 | 1976-11-12 | Diffusion method for high concentration impurity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5361271A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104867820A (en) * | 2015-04-16 | 2015-08-26 | 株洲南车时代电气股份有限公司 | Method for preparing high-concentration N-type shallow junction |
-
1976
- 1976-11-12 JP JP13535276A patent/JPS5361271A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104867820A (en) * | 2015-04-16 | 2015-08-26 | 株洲南车时代电气股份有限公司 | Method for preparing high-concentration N-type shallow junction |
Also Published As
Publication number | Publication date |
---|---|
JPS5522937B2 (en) | 1980-06-19 |
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