JPS5529173A - Impurities diffusion method - Google Patents
Impurities diffusion methodInfo
- Publication number
- JPS5529173A JPS5529173A JP10306978A JP10306978A JPS5529173A JP S5529173 A JPS5529173 A JP S5529173A JP 10306978 A JP10306978 A JP 10306978A JP 10306978 A JP10306978 A JP 10306978A JP S5529173 A JPS5529173 A JP S5529173A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- type
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the electrical characteristic through the prevention of the deterioration and contamination of a SiO2 film by forming the polycrystal SiO2 thin film on the SiO2 film when diffusing the impurities via the opening provided through the SiO2 film coated on the semiconductor substrate.
CONSTITUTION: On bothe surface of an n-type Si substrate 1 coated are SiO2 films, upon which polycrystal Si films 7 are formed in turn. Openings 7a and 2a are formed by photolithography method at the exactly corresponding positions. Next, the heat processing is effected after inserting boron oxide solid plates within the opening to form a p-type region 3 through the sabstrate 1, resulting in the insular separation of the substrate 1. By so doing, the existence of the film 7 prevents a small amount of alkaline metal such as Na to be presents around the subatrate 1 from diffusing into the film 2. Then, after forming openings, a p-type emitter region 4, p-type base region 5 and n-type emitter region 6 are formed by diffusion in a usual manner and finally the film 7 is removed by use of etching cement consisted of nitric acid and hydrofluoric acid.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10306978A JPS5529173A (en) | 1978-08-23 | 1978-08-23 | Impurities diffusion method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10306978A JPS5529173A (en) | 1978-08-23 | 1978-08-23 | Impurities diffusion method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529173A true JPS5529173A (en) | 1980-03-01 |
Family
ID=14344361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10306978A Pending JPS5529173A (en) | 1978-08-23 | 1978-08-23 | Impurities diffusion method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529173A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60182774A (en) * | 1984-02-29 | 1985-09-18 | Matsushita Electronics Corp | Manufacture of fet |
-
1978
- 1978-08-23 JP JP10306978A patent/JPS5529173A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60182774A (en) * | 1984-02-29 | 1985-09-18 | Matsushita Electronics Corp | Manufacture of fet |
JPH0654811B2 (en) * | 1984-02-29 | 1994-07-20 | 松下電子工業株式会社 | Method for manufacturing field effect transistor |
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