JPS5529173A - Impurities diffusion method - Google Patents

Impurities diffusion method

Info

Publication number
JPS5529173A
JPS5529173A JP10306978A JP10306978A JPS5529173A JP S5529173 A JPS5529173 A JP S5529173A JP 10306978 A JP10306978 A JP 10306978A JP 10306978 A JP10306978 A JP 10306978A JP S5529173 A JPS5529173 A JP S5529173A
Authority
JP
Japan
Prior art keywords
film
sio
type
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10306978A
Other languages
Japanese (ja)
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10306978A priority Critical patent/JPS5529173A/en
Publication of JPS5529173A publication Critical patent/JPS5529173A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the electrical characteristic through the prevention of the deterioration and contamination of a SiO2 film by forming the polycrystal SiO2 thin film on the SiO2 film when diffusing the impurities via the opening provided through the SiO2 film coated on the semiconductor substrate.
CONSTITUTION: On bothe surface of an n-type Si substrate 1 coated are SiO2 films, upon which polycrystal Si films 7 are formed in turn. Openings 7a and 2a are formed by photolithography method at the exactly corresponding positions. Next, the heat processing is effected after inserting boron oxide solid plates within the opening to form a p-type region 3 through the sabstrate 1, resulting in the insular separation of the substrate 1. By so doing, the existence of the film 7 prevents a small amount of alkaline metal such as Na to be presents around the subatrate 1 from diffusing into the film 2. Then, after forming openings, a p-type emitter region 4, p-type base region 5 and n-type emitter region 6 are formed by diffusion in a usual manner and finally the film 7 is removed by use of etching cement consisted of nitric acid and hydrofluoric acid.
COPYRIGHT: (C)1980,JPO&Japio
JP10306978A 1978-08-23 1978-08-23 Impurities diffusion method Pending JPS5529173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10306978A JPS5529173A (en) 1978-08-23 1978-08-23 Impurities diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10306978A JPS5529173A (en) 1978-08-23 1978-08-23 Impurities diffusion method

Publications (1)

Publication Number Publication Date
JPS5529173A true JPS5529173A (en) 1980-03-01

Family

ID=14344361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10306978A Pending JPS5529173A (en) 1978-08-23 1978-08-23 Impurities diffusion method

Country Status (1)

Country Link
JP (1) JPS5529173A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182774A (en) * 1984-02-29 1985-09-18 Matsushita Electronics Corp Manufacture of fet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182774A (en) * 1984-02-29 1985-09-18 Matsushita Electronics Corp Manufacture of fet
JPH0654811B2 (en) * 1984-02-29 1994-07-20 松下電子工業株式会社 Method for manufacturing field effect transistor

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