JPS5541765A - Manufacturing semiconductor element - Google Patents

Manufacturing semiconductor element

Info

Publication number
JPS5541765A
JPS5541765A JP11534878A JP11534878A JPS5541765A JP S5541765 A JPS5541765 A JP S5541765A JP 11534878 A JP11534878 A JP 11534878A JP 11534878 A JP11534878 A JP 11534878A JP S5541765 A JPS5541765 A JP S5541765A
Authority
JP
Japan
Prior art keywords
film
region
sio
deposited
stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11534878A
Other languages
Japanese (ja)
Inventor
Masamitsu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11534878A priority Critical patent/JPS5541765A/en
Publication of JPS5541765A publication Critical patent/JPS5541765A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enhance contact property by changing SixNy which is yielded on an Si3N4 film into SiO2 and removing it with hydrofluoric acid solution in the case openings are provided through an SiO2 film, a polycrystal film, and the like deposited on an Si3N4 film, on which an electrode metal is deposited.
CONSTITUTION: A base diffused region 2 is formed in a semiconductor substrate 1, and an emitter diffused region 10 is provided in the region 2. An SiO2 film 3 and an Si3N4 film 4 are stacked and deposited on all over the surface. Then, an opening is made in the stacked film, and a polycrystal Si film 8, which contains As and is contacted with the region, is formed. At the same time an opening reaching the region 2 is also provided in the stacked film containing SixNy film 9 (x≫y) which is generated on the film 4. Thereafter, the intermediate compound film 9 is changed into an SiO2 film 9' by oxidization treatment, and it is removed with thin hydrofluoric acid solution. In this method, the surface of the exposed film 4 is cleaned, and a Ti-Pt-Au electrode 12, which is contacted with the film 8 and the region 2, is deposited thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP11534878A 1978-09-19 1978-09-19 Manufacturing semiconductor element Pending JPS5541765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11534878A JPS5541765A (en) 1978-09-19 1978-09-19 Manufacturing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11534878A JPS5541765A (en) 1978-09-19 1978-09-19 Manufacturing semiconductor element

Publications (1)

Publication Number Publication Date
JPS5541765A true JPS5541765A (en) 1980-03-24

Family

ID=14660292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11534878A Pending JPS5541765A (en) 1978-09-19 1978-09-19 Manufacturing semiconductor element

Country Status (1)

Country Link
JP (1) JPS5541765A (en)

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