JPS5541764A - Manufacturing semiconductor element - Google Patents
Manufacturing semiconductor elementInfo
- Publication number
- JPS5541764A JPS5541764A JP11534778A JP11534778A JPS5541764A JP S5541764 A JPS5541764 A JP S5541764A JP 11534778 A JP11534778 A JP 11534778A JP 11534778 A JP11534778 A JP 11534778A JP S5541764 A JPS5541764 A JP S5541764A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- polycrystal
- deposited
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To enhance contact property by etching out only the surface layer of an Si3N4 film by plasma gas of carbon fluoride in the case openings are provided through an SiO2 film, a polycrystal Si film, an Al2O3 film, and the like deposited on an Si3N4 film, on which an electrode metal is provided.
CONSTITUTION: A base diffused region 2 is formed in a semiconductor substrate 1, and an emitter diffused region 10 is provided in the region 2. An SiO2 film 3 and an Si3N4 film 4 are stacked and deposited on all over the surface. Then, an opening is made in the region 10, and a polycrystal Si film 8 which contains O2 is provided. At the same time a base contact opening 11 which reaches the region 2 is provided through the stacked films contatining intermediate compound 9 of Si3N4 and polycrystal Si which is generated on the film 4. Thereafter, the inside of the opening 11 and the film 8 are protected by photosensitive resin 13. The film 4 is lightly etched by the use of carbon tetrafluoride gas and the compound 9 is removed at the same time. In this method the surface of the film 4 is cleaned, and a Ti-Pt-Au electrode 12, which is contacted with the film 8 and the region 2, is deposited thereon.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11534778A JPS5541764A (en) | 1978-09-19 | 1978-09-19 | Manufacturing semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11534778A JPS5541764A (en) | 1978-09-19 | 1978-09-19 | Manufacturing semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5541764A true JPS5541764A (en) | 1980-03-24 |
Family
ID=14660270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11534778A Pending JPS5541764A (en) | 1978-09-19 | 1978-09-19 | Manufacturing semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5541764A (en) |
-
1978
- 1978-09-19 JP JP11534778A patent/JPS5541764A/en active Pending
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