JPS56142641A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56142641A
JPS56142641A JP4634180A JP4634180A JPS56142641A JP S56142641 A JPS56142641 A JP S56142641A JP 4634180 A JP4634180 A JP 4634180A JP 4634180 A JP4634180 A JP 4634180A JP S56142641 A JPS56142641 A JP S56142641A
Authority
JP
Japan
Prior art keywords
oxide film
thermal oxide
contact hole
layer
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4634180A
Other languages
Japanese (ja)
Inventor
Mari Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4634180A priority Critical patent/JPS56142641A/en
Publication of JPS56142641A publication Critical patent/JPS56142641A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent the corrosion of a thermal oxide film in an etching process of a CVD oxide film 5 by forming a polycrystal silicon layer 7 to the inside and the circumferential section of a contact hole 4 on the thermal oxide film made up on the surface of a semiconductor substrate. CONSTITUTION:A diffusion layer 2 is formed to one main surface section of a silicon substrate 1, a thermal oxide film 3 is made up on a main surface, and the first contact hole 4 having an opening on the diffusion layer 2 is built up to the thermal oxide film 3. A polycrystal layer 7 is formed on an inner surface of the contact hole 4 and the surface of the thermal oxide film 3 of the surrounding section, exceeding a forming region of the second stage contact hole. Lastly, a CVD oxide film 5 functioning as a surface protective film is coated, and etched selectively and the second contact hole 6 is made up. Since the polycrystal layer 7 is put between the films 5 and 3, the corrosion of the thermal oxide film 3 can be prevented when etching the film 5.
JP4634180A 1980-04-08 1980-04-08 Semiconductor device Pending JPS56142641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4634180A JPS56142641A (en) 1980-04-08 1980-04-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4634180A JPS56142641A (en) 1980-04-08 1980-04-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142641A true JPS56142641A (en) 1981-11-07

Family

ID=12744429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4634180A Pending JPS56142641A (en) 1980-04-08 1980-04-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142641A (en)

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