JPS54140883A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54140883A
JPS54140883A JP4894878A JP4894878A JPS54140883A JP S54140883 A JPS54140883 A JP S54140883A JP 4894878 A JP4894878 A JP 4894878A JP 4894878 A JP4894878 A JP 4894878A JP S54140883 A JPS54140883 A JP S54140883A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
insulation film
wiring layer
concave part
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4894878A
Other languages
Japanese (ja)
Inventor
Kimiyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4894878A priority Critical patent/JPS54140883A/en
Publication of JPS54140883A publication Critical patent/JPS54140883A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate a break of a metallic wiring layer by providing a polycrystalline silicon film where a concave part is provided to a semiconductor substrate and by reducing a step by reducing a difference in height between the polycrystalline silicon film and the insulation film on the substrate surface.
CONSTITUTION: In silicon substrate 11, a concave part is formed. In the concave part, polycrystalline silicon films 14 and 14' are formed with their top surfaces nearly equal to insulation film 12. Next, diffusion region 16 and insulation film 15 are formed. Then, metallic wiring layer 17 is made. As a result, a difference in height between the polycrystalline silicon film and the insulation film of the substrate surface becomes small, so that a break of the metallic wiring layer will never occur which is caused by its step.
COPYRIGHT: (C)1979,JPO&Japio
JP4894878A 1978-04-24 1978-04-24 Semiconductor device Pending JPS54140883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4894878A JPS54140883A (en) 1978-04-24 1978-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4894878A JPS54140883A (en) 1978-04-24 1978-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54140883A true JPS54140883A (en) 1979-11-01

Family

ID=12817491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4894878A Pending JPS54140883A (en) 1978-04-24 1978-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54140883A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594606A (en) * 1982-06-10 1986-06-10 Nec Corporation Semiconductor device having multilayer wiring structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594606A (en) * 1982-06-10 1986-06-10 Nec Corporation Semiconductor device having multilayer wiring structure

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