JPS57126172A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- JPS57126172A JPS57126172A JP1057381A JP1057381A JPS57126172A JP S57126172 A JPS57126172 A JP S57126172A JP 1057381 A JP1057381 A JP 1057381A JP 1057381 A JP1057381 A JP 1057381A JP S57126172 A JPS57126172 A JP S57126172A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ring
- guard ring
- film
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a Schottky barrier diode having high reverse withstand voltage characteristic and favorable high-frequency characteristic when a metal film is to be formed on a semiconductor to form the Schottky barrier diode by a method wherein a guard ring is provided at the position within the range of a depletion layer to extend from the barrier and moreover at the position not to come in contact with the barrier face. CONSTITUTION:An N type layer 42 is made to grow vapor phase epitaxially on the N<++> type Si substrate 41, an SiO2 film 43 is adhered on the whole surface, an opening is formed, the guard ring 44 is formed in the exposed layer 42, and it is covered with the SiO2 film 43 similarly. Then the metal layer 45 is adhered on the exposed layer 42 surrounded with the ring 44 extending over the edge part of the film 43, and the Schottky junction face 46 surrounded with the ring 44 is made to be generated. In this constitution, the guard ring 44 is formed with a P type diffusion layer, and moreover the position thereof is set at the place separated from the end part of the junction face 46 by about 1mum. Accordingly although forward directional characteristic is the same with the ordinary diode, reverse directional characteristic is enhanced remarkably, and is accorddingly suitable for high frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1057381A JPS57126172A (en) | 1981-01-27 | 1981-01-27 | Schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1057381A JPS57126172A (en) | 1981-01-27 | 1981-01-27 | Schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57126172A true JPS57126172A (en) | 1982-08-05 |
Family
ID=11753972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1057381A Pending JPS57126172A (en) | 1981-01-27 | 1981-01-27 | Schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57126172A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020585A (en) * | 1983-07-14 | 1985-02-01 | Sanyo Electric Co Ltd | Schottky barrier diode |
| JPS60206179A (en) * | 1984-03-30 | 1985-10-17 | Nec Corp | Semiconductor device |
| JPS61228669A (en) * | 1985-04-01 | 1986-10-11 | Rohm Co Ltd | Schottky barrier diode |
| JP2017059741A (en) * | 2015-09-18 | 2017-03-23 | 豊田合成株式会社 | Semiconductor device, method of manufacturing the same, and power conversion device |
-
1981
- 1981-01-27 JP JP1057381A patent/JPS57126172A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020585A (en) * | 1983-07-14 | 1985-02-01 | Sanyo Electric Co Ltd | Schottky barrier diode |
| JPS60206179A (en) * | 1984-03-30 | 1985-10-17 | Nec Corp | Semiconductor device |
| JPS61228669A (en) * | 1985-04-01 | 1986-10-11 | Rohm Co Ltd | Schottky barrier diode |
| JP2017059741A (en) * | 2015-09-18 | 2017-03-23 | 豊田合成株式会社 | Semiconductor device, method of manufacturing the same, and power conversion device |
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