JPS641284A - Zener diode - Google Patents
Zener diodeInfo
- Publication number
- JPS641284A JPS641284A JP15556587A JP15556587A JPS641284A JP S641284 A JPS641284 A JP S641284A JP 15556587 A JP15556587 A JP 15556587A JP 15556587 A JP15556587 A JP 15556587A JP S641284 A JPS641284 A JP S641284A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- junction
- layer
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To suppress change of characteristic of yield voltage for stabilization by covering the entire part or greater part of the terminating region in the side of surface insulation layer of pn junction in which the yield of junction may occur with an electrode connected to the p type region side.
CONSTITUTION: An n-type layer 1 is formed on a substrate and a p+ type region 2 is formed to an n-type layer 1 by impurity diffusion. The n+ type region 3 is formed to such p+ region 2 and a depletion layer is formed by the carrier diffusion between both regions in the vicinity of the pn junction of the p+ type region 2 and the n+ type region 3. In the succeeding processes, the electrode 5 connected to the p+ type region 2 is formed in such a shape as covering the pn junction J of p+ type region 2 and n+ type region 3 from the above area of insulating film 4. When a backward bias voltage is applied across the p+ type region 2 and n+ type region 3 through the electrodes 5, 6, the yield phenomenon occurs at the pn junction J in the vicinity of insulating layer 4 and the device operates as a zener diode. In this case, the hoe electrons cannot easily be implanted to the insulating film 4 because the electrode 5 in the p+ type region side to which the negative bias is applied covers the pn junction J from the above area of the insulating layer 4, change of shape of depletion layer is suppressed and change with time of yield voltage can be alleviated.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15556587A JPS641284A (en) | 1987-06-24 | 1987-06-24 | Zener diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15556587A JPS641284A (en) | 1987-06-24 | 1987-06-24 | Zener diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH011284A JPH011284A (en) | 1989-01-05 |
JPS641284A true JPS641284A (en) | 1989-01-05 |
Family
ID=15608831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15556587A Pending JPS641284A (en) | 1987-06-24 | 1987-06-24 | Zener diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS641284A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04293270A (en) * | 1991-03-22 | 1992-10-16 | Toshiba Corp | Semiconductor integrated circuit device |
US7582537B2 (en) | 2004-12-15 | 2009-09-01 | Lg Electronics Inc. | Zener diode and methods for fabricating and packaging same |
-
1987
- 1987-06-24 JP JP15556587A patent/JPS641284A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04293270A (en) * | 1991-03-22 | 1992-10-16 | Toshiba Corp | Semiconductor integrated circuit device |
US7582537B2 (en) | 2004-12-15 | 2009-09-01 | Lg Electronics Inc. | Zener diode and methods for fabricating and packaging same |
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