JPS54111290A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54111290A JPS54111290A JP1888578A JP1888578A JPS54111290A JP S54111290 A JPS54111290 A JP S54111290A JP 1888578 A JP1888578 A JP 1888578A JP 1888578 A JP1888578 A JP 1888578A JP S54111290 A JPS54111290 A JP S54111290A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- reach
- buried layer
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To produce a Zener diode which has a small resistance at a breakdown time by superposing plural P+ layers and causing them to reach a buried layer from the N epi-layer surface on the N-type buried layer of a P-type substrate and froming N layers and P layers in them.
CONSTITUTION: N-type buried layer 202 is provided in P-type substrate 201, and N epi-layer 203 is grown. Then, windows are provided in surface oxide film 204, and separation layer 206, bulk Zener layer 205, and bulk circumference layers 205' and 205" are formed by B diffusion. Layer 206 is caused to reach substrate 201 by oxidation burying, and layers 205, 205' and 205'' are caused to reach the buried layer by oxidation burying so that they may superpose to one another by approximately 5μm on the surface. Next, P base 207 and emitter 208 are formed, and Al electrodes 209 and 210 are provided. The B density and the sectional area of the base 207 part just under layer 208 are made large; and since the B density of layer 207 just under base electrode 209, the resistance from the breakdown part to electrode 209 is reduced, and a low-starting drift and low-noise breakdown region extends up to a high current level.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1888578A JPS54111290A (en) | 1978-02-20 | 1978-02-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1888578A JPS54111290A (en) | 1978-02-20 | 1978-02-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54111290A true JPS54111290A (en) | 1979-08-31 |
Family
ID=11984011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1888578A Pending JPS54111290A (en) | 1978-02-20 | 1978-02-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54111290A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60149152U (en) * | 1984-03-15 | 1985-10-03 | 新日本無線株式会社 | embedded zener diode |
| JPS62263678A (en) * | 1986-05-05 | 1987-11-16 | バ−・ブラウン・コ−ポレ−シヨン | Subsurface zener diode |
-
1978
- 1978-02-20 JP JP1888578A patent/JPS54111290A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60149152U (en) * | 1984-03-15 | 1985-10-03 | 新日本無線株式会社 | embedded zener diode |
| JPH0346507Y2 (en) * | 1984-03-15 | 1991-10-01 | ||
| JPS62263678A (en) * | 1986-05-05 | 1987-11-16 | バ−・ブラウン・コ−ポレ−シヨン | Subsurface zener diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS567463A (en) | Semiconductor device and its manufacture | |
| JPS55102267A (en) | Semiconductor control element | |
| JPS54111290A (en) | Semiconductor device | |
| JPS54112182A (en) | Semiconductor device | |
| JPS5473585A (en) | Gate turn-off thyristor | |
| JPS56103460A (en) | Semiconductor device | |
| JPS5499580A (en) | Semiconductor integrated circuit device | |
| JPS577157A (en) | Semiconductor device | |
| JPS54154980A (en) | Constant voltage diode | |
| JPS5563879A (en) | Semiconductor device | |
| JPS54141596A (en) | Semiconductor device | |
| JPS5513990A (en) | Semiconductor device | |
| JPS54141578A (en) | Semiconductor device | |
| JPS5623774A (en) | Semiconductor device and its manufacture | |
| JPS562667A (en) | Semiconductor device and manufacture thereof | |
| JPS55162263A (en) | Semiconductor device | |
| JPS641284A (en) | Zener diode | |
| JPS56135965A (en) | Semiconductor device | |
| JPS54139489A (en) | Zener diode | |
| JPS5561828A (en) | Constant voltage circuit device | |
| JPS5773932A (en) | High tension-resisting planer-type semiconductor device | |
| JPS55107261A (en) | Semiconductor integrated circuit device | |
| JPS5612779A (en) | Zener diode | |
| JPS56112752A (en) | Semiconductor device | |
| JP2993084B2 (en) | Voltage standard diode |