JPS6477968A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6477968A
JPS6477968A JP23373787A JP23373787A JPS6477968A JP S6477968 A JPS6477968 A JP S6477968A JP 23373787 A JP23373787 A JP 23373787A JP 23373787 A JP23373787 A JP 23373787A JP S6477968 A JPS6477968 A JP S6477968A
Authority
JP
Japan
Prior art keywords
type region
cathode
parasitic transistor
type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23373787A
Other languages
Japanese (ja)
Inventor
Toshiyuki Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23373787A priority Critical patent/JPS6477968A/en
Publication of JPS6477968A publication Critical patent/JPS6477968A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To maintain the function for holding a constant voltage even if negative noises enter into a neighboring region and a parasitic transistor is conducted, by surrounding an n-type region in contact with the cathode electrode of a Zener diode with a p-type region, and blocking the connection with the parasitic transistor. CONSTITUTION:On a p-type silicon substrate 1, a high concentration n-type region 2 and a high concentration p-type region 4 are formed. Then, impurity ions are implanted, and a p<+> type region 5, n-type regions 6 and 72 and a p-type region 7 are formed. A p-type region 71 is formed so as to surround the n-type region 6. Even if a parasitic transistor 11 is conducted, the function of the device can be maintained when a current, which is supplied from a cathode 8 of a Zener diode Z is made to flow to an anode 9 continuously. The n-type region 71, which is connected to the cathode 8, is surrounded with the p-type region 71. Thus the outflow of the voltage, which is supplied to the cathode 8 to a collector 3 of the parasitic transistor 11 is prevented.
JP23373787A 1987-09-19 1987-09-19 Semiconductor device Pending JPS6477968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23373787A JPS6477968A (en) 1987-09-19 1987-09-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23373787A JPS6477968A (en) 1987-09-19 1987-09-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6477968A true JPS6477968A (en) 1989-03-23

Family

ID=16959786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23373787A Pending JPS6477968A (en) 1987-09-19 1987-09-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6477968A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148484A (en) * 1999-11-22 2001-05-29 Rohm Co Ltd Anode common zener diode
EP1232914A2 (en) 2001-02-15 2002-08-21 Sumitomo Wiring Systems, Ltd. Cable reel
JP2007281259A (en) * 2006-04-07 2007-10-25 Mitsumi Electric Co Ltd Electrostatic protective element and electrostatic protective circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546480A (en) * 1977-06-16 1979-01-18 Nippon Denso Co Ltd Semiconductor device
JPS5488091A (en) * 1977-12-26 1979-07-12 Toshiba Corp Semiconductor integrated circuit device
JPS5563879A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor device
JPS6255317A (en) * 1985-08-30 1987-03-11 Kyoei Dokouki:Kk Continuous wall sheathing work

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546480A (en) * 1977-06-16 1979-01-18 Nippon Denso Co Ltd Semiconductor device
JPS5488091A (en) * 1977-12-26 1979-07-12 Toshiba Corp Semiconductor integrated circuit device
JPS5563879A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor device
JPS6255317A (en) * 1985-08-30 1987-03-11 Kyoei Dokouki:Kk Continuous wall sheathing work

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148484A (en) * 1999-11-22 2001-05-29 Rohm Co Ltd Anode common zener diode
EP1232914A2 (en) 2001-02-15 2002-08-21 Sumitomo Wiring Systems, Ltd. Cable reel
JP2007281259A (en) * 2006-04-07 2007-10-25 Mitsumi Electric Co Ltd Electrostatic protective element and electrostatic protective circuit

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