JPS6477968A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6477968A JPS6477968A JP23373787A JP23373787A JPS6477968A JP S6477968 A JPS6477968 A JP S6477968A JP 23373787 A JP23373787 A JP 23373787A JP 23373787 A JP23373787 A JP 23373787A JP S6477968 A JPS6477968 A JP S6477968A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- cathode
- parasitic transistor
- type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To maintain the function for holding a constant voltage even if negative noises enter into a neighboring region and a parasitic transistor is conducted, by surrounding an n-type region in contact with the cathode electrode of a Zener diode with a p-type region, and blocking the connection with the parasitic transistor. CONSTITUTION:On a p-type silicon substrate 1, a high concentration n-type region 2 and a high concentration p-type region 4 are formed. Then, impurity ions are implanted, and a p<+> type region 5, n-type regions 6 and 72 and a p-type region 7 are formed. A p-type region 71 is formed so as to surround the n-type region 6. Even if a parasitic transistor 11 is conducted, the function of the device can be maintained when a current, which is supplied from a cathode 8 of a Zener diode Z is made to flow to an anode 9 continuously. The n-type region 71, which is connected to the cathode 8, is surrounded with the p-type region 71. Thus the outflow of the voltage, which is supplied to the cathode 8 to a collector 3 of the parasitic transistor 11 is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23373787A JPS6477968A (en) | 1987-09-19 | 1987-09-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23373787A JPS6477968A (en) | 1987-09-19 | 1987-09-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477968A true JPS6477968A (en) | 1989-03-23 |
Family
ID=16959786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23373787A Pending JPS6477968A (en) | 1987-09-19 | 1987-09-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477968A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148484A (en) * | 1999-11-22 | 2001-05-29 | Rohm Co Ltd | Anode common zener diode |
EP1232914A2 (en) | 2001-02-15 | 2002-08-21 | Sumitomo Wiring Systems, Ltd. | Cable reel |
JP2007281259A (en) * | 2006-04-07 | 2007-10-25 | Mitsumi Electric Co Ltd | Electrostatic protective element and electrostatic protective circuit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546480A (en) * | 1977-06-16 | 1979-01-18 | Nippon Denso Co Ltd | Semiconductor device |
JPS5488091A (en) * | 1977-12-26 | 1979-07-12 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5563879A (en) * | 1978-11-08 | 1980-05-14 | Nec Corp | Semiconductor device |
JPS6255317A (en) * | 1985-08-30 | 1987-03-11 | Kyoei Dokouki:Kk | Continuous wall sheathing work |
-
1987
- 1987-09-19 JP JP23373787A patent/JPS6477968A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546480A (en) * | 1977-06-16 | 1979-01-18 | Nippon Denso Co Ltd | Semiconductor device |
JPS5488091A (en) * | 1977-12-26 | 1979-07-12 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5563879A (en) * | 1978-11-08 | 1980-05-14 | Nec Corp | Semiconductor device |
JPS6255317A (en) * | 1985-08-30 | 1987-03-11 | Kyoei Dokouki:Kk | Continuous wall sheathing work |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148484A (en) * | 1999-11-22 | 2001-05-29 | Rohm Co Ltd | Anode common zener diode |
EP1232914A2 (en) | 2001-02-15 | 2002-08-21 | Sumitomo Wiring Systems, Ltd. | Cable reel |
JP2007281259A (en) * | 2006-04-07 | 2007-10-25 | Mitsumi Electric Co Ltd | Electrostatic protective element and electrostatic protective circuit |
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