JPS6442858A - Metal semiconductor junction diode and manufacture thereof - Google Patents
Metal semiconductor junction diode and manufacture thereofInfo
- Publication number
- JPS6442858A JPS6442858A JP62199111A JP19911187A JPS6442858A JP S6442858 A JPS6442858 A JP S6442858A JP 62199111 A JP62199111 A JP 62199111A JP 19911187 A JP19911187 A JP 19911187A JP S6442858 A JPS6442858 A JP S6442858A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- electrode
- schottky barrier
- metal silicide
- peripheral part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce a leakage current at the peripheral part of an electrode by a method wherein a metal or metal silicide film having a high Schottky barrier is formed on the periphery of a metal or metal silicide film having a low Schottky barrier in an annular form. CONSTITUTION:An electrode is formed on a semiconductor substrate 3 in such a way that a metal or metal silicide ring 2 having a high Schottky barrier is arranged on the periphery of a metal or metal silicide film 1 having a low Schottky barrier. The spreading of a depletion layer at the time when a reverse bias is applied to this diode is turned into a region (a depletion layer) 4. In such a way, the layer 4 at the peripheral part of the electrode spreads wider than its central part. Thereby, a leakage current and a decrease in breakdown strength at the peripheral part of the electrode can be reduced without forming a guard ring by implanting ions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62199111A JP2693764B2 (en) | 1987-08-11 | 1987-08-11 | Metal semiconductor junction type diode and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62199111A JP2693764B2 (en) | 1987-08-11 | 1987-08-11 | Metal semiconductor junction type diode and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6442858A true JPS6442858A (en) | 1989-02-15 |
JP2693764B2 JP2693764B2 (en) | 1997-12-24 |
Family
ID=16402308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62199111A Expired - Lifetime JP2693764B2 (en) | 1987-08-11 | 1987-08-11 | Metal semiconductor junction type diode and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2693764B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991004581A1 (en) * | 1989-09-21 | 1991-04-04 | Unisearch Limited | Guard barrier for schottky barrier devices |
WO1999062112A1 (en) * | 1998-05-26 | 1999-12-02 | Infineon Technologies Ag | Method for producing schottky diodes |
WO2011018829A1 (en) * | 2009-08-11 | 2011-02-17 | 株式会社Si-Nano | Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS541614A (en) * | 1977-06-06 | 1979-01-08 | Shaken Kk | Phototypesetter and similar machine |
-
1987
- 1987-08-11 JP JP62199111A patent/JP2693764B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS541614A (en) * | 1977-06-06 | 1979-01-08 | Shaken Kk | Phototypesetter and similar machine |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991004581A1 (en) * | 1989-09-21 | 1991-04-04 | Unisearch Limited | Guard barrier for schottky barrier devices |
WO1999062112A1 (en) * | 1998-05-26 | 1999-12-02 | Infineon Technologies Ag | Method for producing schottky diodes |
US6448162B1 (en) | 1998-05-26 | 2002-09-10 | Infineon Technologies Ag | Method for producing schottky diodes |
WO2011018829A1 (en) * | 2009-08-11 | 2011-02-17 | 株式会社Si-Nano | Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element |
JP2011040553A (en) * | 2009-08-11 | 2011-02-24 | Si-Nano Inc | Thin-film photoelectric transducer and method of manufacturing the same |
CN102598290A (en) * | 2009-08-11 | 2012-07-18 | 日商卢光股份有限公司 | Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element |
Also Published As
Publication number | Publication date |
---|---|
JP2693764B2 (en) | 1997-12-24 |
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