JPS6442858A - Metal semiconductor junction diode and manufacture thereof - Google Patents

Metal semiconductor junction diode and manufacture thereof

Info

Publication number
JPS6442858A
JPS6442858A JP62199111A JP19911187A JPS6442858A JP S6442858 A JPS6442858 A JP S6442858A JP 62199111 A JP62199111 A JP 62199111A JP 19911187 A JP19911187 A JP 19911187A JP S6442858 A JPS6442858 A JP S6442858A
Authority
JP
Japan
Prior art keywords
metal
electrode
schottky barrier
metal silicide
peripheral part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62199111A
Other languages
Japanese (ja)
Other versions
JP2693764B2 (en
Inventor
Kazuo Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62199111A priority Critical patent/JP2693764B2/en
Publication of JPS6442858A publication Critical patent/JPS6442858A/en
Application granted granted Critical
Publication of JP2693764B2 publication Critical patent/JP2693764B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To reduce a leakage current at the peripheral part of an electrode by a method wherein a metal or metal silicide film having a high Schottky barrier is formed on the periphery of a metal or metal silicide film having a low Schottky barrier in an annular form. CONSTITUTION:An electrode is formed on a semiconductor substrate 3 in such a way that a metal or metal silicide ring 2 having a high Schottky barrier is arranged on the periphery of a metal or metal silicide film 1 having a low Schottky barrier. The spreading of a depletion layer at the time when a reverse bias is applied to this diode is turned into a region (a depletion layer) 4. In such a way, the layer 4 at the peripheral part of the electrode spreads wider than its central part. Thereby, a leakage current and a decrease in breakdown strength at the peripheral part of the electrode can be reduced without forming a guard ring by implanting ions.
JP62199111A 1987-08-11 1987-08-11 Metal semiconductor junction type diode and its manufacturing method Expired - Lifetime JP2693764B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199111A JP2693764B2 (en) 1987-08-11 1987-08-11 Metal semiconductor junction type diode and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199111A JP2693764B2 (en) 1987-08-11 1987-08-11 Metal semiconductor junction type diode and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS6442858A true JPS6442858A (en) 1989-02-15
JP2693764B2 JP2693764B2 (en) 1997-12-24

Family

ID=16402308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199111A Expired - Lifetime JP2693764B2 (en) 1987-08-11 1987-08-11 Metal semiconductor junction type diode and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2693764B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991004581A1 (en) * 1989-09-21 1991-04-04 Unisearch Limited Guard barrier for schottky barrier devices
WO1999062112A1 (en) * 1998-05-26 1999-12-02 Infineon Technologies Ag Method for producing schottky diodes
WO2011018829A1 (en) * 2009-08-11 2011-02-17 株式会社Si-Nano Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541614A (en) * 1977-06-06 1979-01-08 Shaken Kk Phototypesetter and similar machine

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541614A (en) * 1977-06-06 1979-01-08 Shaken Kk Phototypesetter and similar machine

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991004581A1 (en) * 1989-09-21 1991-04-04 Unisearch Limited Guard barrier for schottky barrier devices
WO1999062112A1 (en) * 1998-05-26 1999-12-02 Infineon Technologies Ag Method for producing schottky diodes
US6448162B1 (en) 1998-05-26 2002-09-10 Infineon Technologies Ag Method for producing schottky diodes
WO2011018829A1 (en) * 2009-08-11 2011-02-17 株式会社Si-Nano Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element
JP2011040553A (en) * 2009-08-11 2011-02-24 Si-Nano Inc Thin-film photoelectric transducer and method of manufacturing the same
CN102598290A (en) * 2009-08-11 2012-07-18 日商卢光股份有限公司 Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element

Also Published As

Publication number Publication date
JP2693764B2 (en) 1997-12-24

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