JPS5595370A - Compound semiconductor field-effect transistor - Google Patents
Compound semiconductor field-effect transistorInfo
- Publication number
- JPS5595370A JPS5595370A JP246679A JP246679A JPS5595370A JP S5595370 A JPS5595370 A JP S5595370A JP 246679 A JP246679 A JP 246679A JP 246679 A JP246679 A JP 246679A JP S5595370 A JPS5595370 A JP S5595370A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- forbidden band
- compound semiconductor
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Abstract
PURPOSE:To reduce gate Schottky leakage current and increase avalanche breakdown voltage by providing, between an active layer and a gate metal, a compound semiconductor layer having a forbidden band wider than the forbidden band of the compound semiconductor constituting the active layer. CONSTITUTION:High resistance InP buffer layer 11, In0.73Ga0.27As0.6P0.4 active layer 12 with forbidden band 0.9eV, and GaP0.4Sb0.6 layer 13 with forbidden band about 1.45eV are epitaxially grown in laminate on InP substrate 10. Next, gate electrode 14 is formed in the center of layer 13. By removing the part surrounding layer 13, layer 12 is exposed in a ring form. Ohmic contact electrode 15 is coated on this exposed part. By this, it is possible to obtain good transistor characteristics easily, with the height of the Schottky barrier about 1.0eV, gate leakage current 1.0muA or less, and gate breakdown voltage 15V or higher.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP246679A JPS5595370A (en) | 1979-01-10 | 1979-01-10 | Compound semiconductor field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP246679A JPS5595370A (en) | 1979-01-10 | 1979-01-10 | Compound semiconductor field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5595370A true JPS5595370A (en) | 1980-07-19 |
Family
ID=11530078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP246679A Pending JPS5595370A (en) | 1979-01-10 | 1979-01-10 | Compound semiconductor field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595370A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55120167A (en) * | 1979-03-08 | 1980-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Field effect type semiconductor device |
JPS56157068A (en) * | 1980-05-08 | 1981-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
JPS5844770A (en) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | Semiconductor device |
JPS59114873A (en) * | 1982-12-21 | 1984-07-03 | Fujitsu Ltd | Semiconductor device |
JPS6184870A (en) * | 1984-10-03 | 1986-04-30 | Hitachi Ltd | Semiconductor device |
JPS6196770A (en) * | 1984-10-17 | 1986-05-15 | Nec Corp | Semiconductor device |
JPS61225874A (en) * | 1985-03-29 | 1986-10-07 | Sumitomo Electric Ind Ltd | Field effect transistor |
JPH025437A (en) * | 1988-06-23 | 1990-01-10 | Toshiba Corp | Field-effect transistor and manufacture thereof |
FR2647597A1 (en) * | 1989-05-29 | 1990-11-30 | Mitsubishi Electric Corp | SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH JOINTED METAL INSULATOR AND METHOD FOR THE PRODUCTION THEREOF |
US5124770A (en) * | 1985-10-07 | 1992-06-23 | Hitachi, Ltd. | Field effect transistor with alpha particle protection |
JPH04216636A (en) * | 1990-12-17 | 1992-08-06 | Nippon Telegr & Teleph Corp <Ntt> | Substrate for iii-v compound semiconductor integrated circuit |
US5177026A (en) * | 1989-05-29 | 1993-01-05 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a compound semiconductor MIS FET |
US6144049A (en) * | 1997-02-05 | 2000-11-07 | Nec Corporation | Field effect transistor |
JP2002083823A (en) * | 2000-09-08 | 2002-03-22 | Fujitsu Ltd | Compound semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503786A (en) * | 1973-05-16 | 1975-01-16 | ||
JPS53126282A (en) * | 1977-04-08 | 1978-11-04 | Thomson Csf | Fet transistor |
-
1979
- 1979-01-10 JP JP246679A patent/JPS5595370A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503786A (en) * | 1973-05-16 | 1975-01-16 | ||
JPS53126282A (en) * | 1977-04-08 | 1978-11-04 | Thomson Csf | Fet transistor |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55120167A (en) * | 1979-03-08 | 1980-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Field effect type semiconductor device |
JPS56157068A (en) * | 1980-05-08 | 1981-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
JPS5844770A (en) * | 1981-09-10 | 1983-03-15 | Fujitsu Ltd | Semiconductor device |
JPS59114873A (en) * | 1982-12-21 | 1984-07-03 | Fujitsu Ltd | Semiconductor device |
JPH0812909B2 (en) * | 1984-10-03 | 1996-02-07 | 株式会社日立製作所 | Semiconductor device |
JPS6184870A (en) * | 1984-10-03 | 1986-04-30 | Hitachi Ltd | Semiconductor device |
JPS6196770A (en) * | 1984-10-17 | 1986-05-15 | Nec Corp | Semiconductor device |
JPS61225874A (en) * | 1985-03-29 | 1986-10-07 | Sumitomo Electric Ind Ltd | Field effect transistor |
US5124770A (en) * | 1985-10-07 | 1992-06-23 | Hitachi, Ltd. | Field effect transistor with alpha particle protection |
JPH025437A (en) * | 1988-06-23 | 1990-01-10 | Toshiba Corp | Field-effect transistor and manufacture thereof |
FR2647597A1 (en) * | 1989-05-29 | 1990-11-30 | Mitsubishi Electric Corp | SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH JOINTED METAL INSULATOR AND METHOD FOR THE PRODUCTION THEREOF |
US5177026A (en) * | 1989-05-29 | 1993-01-05 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a compound semiconductor MIS FET |
JPH04216636A (en) * | 1990-12-17 | 1992-08-06 | Nippon Telegr & Teleph Corp <Ntt> | Substrate for iii-v compound semiconductor integrated circuit |
US6144049A (en) * | 1997-02-05 | 2000-11-07 | Nec Corporation | Field effect transistor |
US6184547B1 (en) | 1997-02-05 | 2001-02-06 | Nec Corporation | Field effect transistor and method of fabricating the same |
US6448119B1 (en) | 1997-02-05 | 2002-09-10 | Nec Corporation | Field effect transistor and method of fabricating the same |
JP2002083823A (en) * | 2000-09-08 | 2002-03-22 | Fujitsu Ltd | Compound semiconductor device |
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