JPS6457680A - Compound semiconductor integrated circuit device - Google Patents
Compound semiconductor integrated circuit deviceInfo
- Publication number
- JPS6457680A JPS6457680A JP63057257A JP5725788A JPS6457680A JP S6457680 A JPS6457680 A JP S6457680A JP 63057257 A JP63057257 A JP 63057257A JP 5725788 A JP5725788 A JP 5725788A JP S6457680 A JPS6457680 A JP S6457680A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- source
- semiconductor
- ohmic contact
- drain electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 239000000956 alloy Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To simplify the high integrated, high speed manufacturing processes while enabling a Schottky gate electrode and an ohmic electrode to be integrated with each other using the same material by a method wherein an ohmic contact layer in non-alloy contact with a metal forming source.drain electrodes is provided below the source.drain electrodes. CONSTITUTION:An active layer 12 comprising the first semiconductor and having a channel region, source.drain regions is formed on a compound semiconductor substrate 11; an electron fed layer 13 containing impurity and comprising the second semiconductor in less electron affinity than that of the first semiconductor is formed on the active layer 12; and an intermediate layer 14 comprising the third semiconductor is formed on the source.drain regions. Next, an ohmic contact layer 15 comprising the fourth semiconductor and in non-alloy ohmic contact with metal is formed on the intermediate layer 14; source.drain electrodes 19S, 19D in non-alloy ohmic contact with metal is formed on the layer 15; and a Schottky gate electrode 19G comprising the same metal as that of the source.drain electrodes 19S, 19D is formed on a channel region on the electron fed layer 13.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5725788A JPH0750781B2 (en) | 1987-03-18 | 1988-03-10 | Compound semiconductor integrated circuit device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-61097 | 1987-03-18 | ||
JP6109787 | 1987-03-18 | ||
JP5725788A JPH0750781B2 (en) | 1987-03-18 | 1988-03-10 | Compound semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6457680A true JPS6457680A (en) | 1989-03-03 |
JPH0750781B2 JPH0750781B2 (en) | 1995-05-31 |
Family
ID=26398273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5725788A Expired - Lifetime JPH0750781B2 (en) | 1987-03-18 | 1988-03-10 | Compound semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0750781B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02273942A (en) * | 1989-04-17 | 1990-11-08 | Sumitomo Electric Ind Ltd | High electron mobility transistor and manufacture thereof |
JPH06169065A (en) * | 1992-12-01 | 1994-06-14 | Nec Corp | Manufacture of compound semiconductor integrated circuit |
JPH07312373A (en) * | 1994-05-18 | 1995-11-28 | Nec Corp | Field-effect transistor and its manufacturing method |
JP2007324263A (en) * | 2006-05-31 | 2007-12-13 | Matsushita Electric Ind Co Ltd | Field-effect transistor and manufacturing method thereof |
JP2013175782A (en) * | 2005-12-13 | 2013-09-05 | Cree Inc | Semiconductor devices including implanted regions and protective layers, and method of forming the same |
JP2013179337A (en) * | 2006-11-06 | 2013-09-09 | Cree Inc | Manufacturing method of semiconductor device including implantation region for forming low resistance contact in embedded layer, and relevant device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123272A (en) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | Compound semiconductor device |
JPS59172776A (en) * | 1983-03-23 | 1984-09-29 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6050966A (en) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Manufacture of field effect transistor |
JPS6050965A (en) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Field effect transistor and manufacture thereof |
JPS6064430A (en) * | 1983-09-19 | 1985-04-13 | Oki Electric Ind Co Ltd | Manufacture of gaas group compound semiconductor device |
JPS63187666A (en) * | 1987-01-30 | 1988-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
-
1988
- 1988-03-10 JP JP5725788A patent/JPH0750781B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123272A (en) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | Compound semiconductor device |
JPS59172776A (en) * | 1983-03-23 | 1984-09-29 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6050966A (en) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Manufacture of field effect transistor |
JPS6050965A (en) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Field effect transistor and manufacture thereof |
JPS6064430A (en) * | 1983-09-19 | 1985-04-13 | Oki Electric Ind Co Ltd | Manufacture of gaas group compound semiconductor device |
JPS63187666A (en) * | 1987-01-30 | 1988-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02273942A (en) * | 1989-04-17 | 1990-11-08 | Sumitomo Electric Ind Ltd | High electron mobility transistor and manufacture thereof |
JPH06169065A (en) * | 1992-12-01 | 1994-06-14 | Nec Corp | Manufacture of compound semiconductor integrated circuit |
JPH07312373A (en) * | 1994-05-18 | 1995-11-28 | Nec Corp | Field-effect transistor and its manufacturing method |
JP2013175782A (en) * | 2005-12-13 | 2013-09-05 | Cree Inc | Semiconductor devices including implanted regions and protective layers, and method of forming the same |
US9318594B2 (en) | 2005-12-13 | 2016-04-19 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers |
JP2007324263A (en) * | 2006-05-31 | 2007-12-13 | Matsushita Electric Ind Co Ltd | Field-effect transistor and manufacturing method thereof |
JP2013179337A (en) * | 2006-11-06 | 2013-09-09 | Cree Inc | Manufacturing method of semiconductor device including implantation region for forming low resistance contact in embedded layer, and relevant device |
US9984881B2 (en) | 2006-11-06 | 2018-05-29 | Cree, Inc. | Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
Also Published As
Publication number | Publication date |
---|---|
JPH0750781B2 (en) | 1995-05-31 |
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