JPS57111063A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS57111063A JPS57111063A JP18837980A JP18837980A JPS57111063A JP S57111063 A JPS57111063 A JP S57111063A JP 18837980 A JP18837980 A JP 18837980A JP 18837980 A JP18837980 A JP 18837980A JP S57111063 A JPS57111063 A JP S57111063A
- Authority
- JP
- Japan
- Prior art keywords
- type
- walls
- withstand voltage
- junctions
- voltage characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enhance the reverse withstand voltage characteristic of a semiconductor element in which reverse mesa type bevel etching is performed from the back of a semiconductor wafer provided with a p-n junction on the surface by a method wherein impurity diffusion walls to suppress extension of depletion layers are provided at the adjacents part of the p-n junctions on the sides. CONSTITUTION:An n<-> type collector layer 18, a p type base layer 17 are made to grow epitaxially on an n<+> type substrate 19, and after a protective film is formed, openings are formed to provide n type emitter layers 16 by diffusion. The wafer 15 thereof is etched from the back 23 to form bevel etched grooves in nearly V shape, and walls 24 are made to be inclined as to form the exposed sides of collector junctions 21. Then p<++> type impurity diffusion walls 25 to suppress extension of the depletion layers are provided at the bottom parts 28 of grooves. Accordingly reverse withstand voltage characteristic is enhanced, distortion of wave form is eliminated, and noise can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18837980A JPS57111063A (en) | 1980-12-26 | 1980-12-26 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18837980A JPS57111063A (en) | 1980-12-26 | 1980-12-26 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57111063A true JPS57111063A (en) | 1982-07-10 |
Family
ID=16222582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18837980A Pending JPS57111063A (en) | 1980-12-26 | 1980-12-26 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57111063A (en) |
-
1980
- 1980-12-26 JP JP18837980A patent/JPS57111063A/en active Pending
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