JPS5598856A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5598856A JPS5598856A JP736279A JP736279A JPS5598856A JP S5598856 A JPS5598856 A JP S5598856A JP 736279 A JP736279 A JP 736279A JP 736279 A JP736279 A JP 736279A JP S5598856 A JPS5598856 A JP S5598856A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- region
- type
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce the recombination current in the vicinity of an emitter junction in a semiconductor device and increase the amplification factor of the device in low current range by forming the emitter region of a planar transistor of a shallow and low impurity density region and a deep and high impurity density region surrounded by the shallow and low impurity density region.
CONSTITUTION: An SiO2 film 22 is coated on an n-type silicon substate 21, an opening is perforated at the film 22, and a p-type base region 23 is diffused in the substrate 21. Openings 25a, 25b are again perforated at an SiO2 film 24 thus formed at this time. Then, a polycrystalline silicon layer 26 is grown in gas phase on the entire surface of this substrate, an n-type impurity is diffused in the layer 26, and n-type layers 27, 27b are formed in the openings 25a, 25b, respectively. Thereafter, SiO2 film 28 is coated on the entire surface, and the film 28 and the layer 26 are retained only between the peripheral portion of the layer 27a and the layer 27b. Thus, with the films 22, 28 as masks a deep n+type emitter region 29 is diffused. Simultaneously, impurity in the layer 26 is diffused, and shallower n-type emitter regions 37a, 37b than the region 29 are formed around the region 29. Then, an SiO2 film 30 is coated on the entire surface thus formed, openings are perforated at the film 30, and respective electrodes are attached thereto.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP736279A JPS5598856A (en) | 1979-01-24 | 1979-01-24 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP736279A JPS5598856A (en) | 1979-01-24 | 1979-01-24 | Method of fabricating semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5598856A true JPS5598856A (en) | 1980-07-28 |
JPS6153866B2 JPS6153866B2 (en) | 1986-11-19 |
Family
ID=11663844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP736279A Granted JPS5598856A (en) | 1979-01-24 | 1979-01-24 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5598856A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832482A (en) * | 1971-08-30 | 1973-04-28 | ||
JPS4917686A (en) * | 1972-04-03 | 1974-02-16 | ||
JPS5010100A (en) * | 1973-05-24 | 1975-02-01 |
-
1979
- 1979-01-24 JP JP736279A patent/JPS5598856A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832482A (en) * | 1971-08-30 | 1973-04-28 | ||
JPS4917686A (en) * | 1972-04-03 | 1974-02-16 | ||
JPS5010100A (en) * | 1973-05-24 | 1975-02-01 |
Also Published As
Publication number | Publication date |
---|---|
JPS6153866B2 (en) | 1986-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55128869A (en) | Semiconductor device and method of fabricating the same | |
JPS54100273A (en) | Memory circuit and variable resistance element | |
JPS5691478A (en) | Manufacture of punch-through type diode | |
JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
US3575742A (en) | Method of making a semiconductor device | |
JPS55105344A (en) | Semiconductor device | |
JPS5598856A (en) | Method of fabricating semiconductor device | |
JPS5583271A (en) | Semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS55108767A (en) | Semiconductor device and manufacture of the same | |
JPS5456381A (en) | Production of semiconductor device | |
JPS55108766A (en) | Semiconductor device and manufacture of the same | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS5541787A (en) | Semiconductor device | |
JPS54162477A (en) | Lateral transistor | |
JPS5637622A (en) | Manufacture of semiconductor device | |
JPS54137282A (en) | Lateral transistor | |
JPS5460865A (en) | Semiconductor device | |
JPS57111063A (en) | Semiconductor element | |
JPS54160187A (en) | Semiconductor device | |
JPS5586152A (en) | Manufacture of semiconductor device | |
JPS5469089A (en) | Semiconductor device | |
JPS54106175A (en) | Manufacture of semiconductor device | |
JPS5516412A (en) | Semiconductor device | |
JPS5570043A (en) | Fabricating method of semiconductor device having isolating oxide region |