JPS5598856A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5598856A
JPS5598856A JP736279A JP736279A JPS5598856A JP S5598856 A JPS5598856 A JP S5598856A JP 736279 A JP736279 A JP 736279A JP 736279 A JP736279 A JP 736279A JP S5598856 A JPS5598856 A JP S5598856A
Authority
JP
Japan
Prior art keywords
film
layer
region
type
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP736279A
Other languages
Japanese (ja)
Other versions
JPS6153866B2 (en
Inventor
Koji Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP736279A priority Critical patent/JPS5598856A/en
Publication of JPS5598856A publication Critical patent/JPS5598856A/en
Publication of JPS6153866B2 publication Critical patent/JPS6153866B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the recombination current in the vicinity of an emitter junction in a semiconductor device and increase the amplification factor of the device in low current range by forming the emitter region of a planar transistor of a shallow and low impurity density region and a deep and high impurity density region surrounded by the shallow and low impurity density region.
CONSTITUTION: An SiO2 film 22 is coated on an n-type silicon substate 21, an opening is perforated at the film 22, and a p-type base region 23 is diffused in the substrate 21. Openings 25a, 25b are again perforated at an SiO2 film 24 thus formed at this time. Then, a polycrystalline silicon layer 26 is grown in gas phase on the entire surface of this substrate, an n-type impurity is diffused in the layer 26, and n-type layers 27, 27b are formed in the openings 25a, 25b, respectively. Thereafter, SiO2 film 28 is coated on the entire surface, and the film 28 and the layer 26 are retained only between the peripheral portion of the layer 27a and the layer 27b. Thus, with the films 22, 28 as masks a deep n+type emitter region 29 is diffused. Simultaneously, impurity in the layer 26 is diffused, and shallower n-type emitter regions 37a, 37b than the region 29 are formed around the region 29. Then, an SiO2 film 30 is coated on the entire surface thus formed, openings are perforated at the film 30, and respective electrodes are attached thereto.
COPYRIGHT: (C)1980,JPO&Japio
JP736279A 1979-01-24 1979-01-24 Method of fabricating semiconductor device Granted JPS5598856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP736279A JPS5598856A (en) 1979-01-24 1979-01-24 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP736279A JPS5598856A (en) 1979-01-24 1979-01-24 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS5598856A true JPS5598856A (en) 1980-07-28
JPS6153866B2 JPS6153866B2 (en) 1986-11-19

Family

ID=11663844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP736279A Granted JPS5598856A (en) 1979-01-24 1979-01-24 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598856A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832482A (en) * 1971-08-30 1973-04-28
JPS4917686A (en) * 1972-04-03 1974-02-16
JPS5010100A (en) * 1973-05-24 1975-02-01

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832482A (en) * 1971-08-30 1973-04-28
JPS4917686A (en) * 1972-04-03 1974-02-16
JPS5010100A (en) * 1973-05-24 1975-02-01

Also Published As

Publication number Publication date
JPS6153866B2 (en) 1986-11-19

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