JPS5570043A - Fabricating method of semiconductor device having isolating oxide region - Google Patents

Fabricating method of semiconductor device having isolating oxide region

Info

Publication number
JPS5570043A
JPS5570043A JP13518079A JP13518079A JPS5570043A JP S5570043 A JPS5570043 A JP S5570043A JP 13518079 A JP13518079 A JP 13518079A JP 13518079 A JP13518079 A JP 13518079A JP S5570043 A JPS5570043 A JP S5570043A
Authority
JP
Japan
Prior art keywords
oxide region
junction
semiconductor device
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13518079A
Other languages
Japanese (ja)
Inventor
Akio Hayasaka
Hideo Noda
Michio Suzuki
Hiroyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13518079A priority Critical patent/JPS5570043A/en
Publication of JPS5570043A publication Critical patent/JPS5570043A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To prevent a pn-junction from occurrence of a channel in the vicinity and reduce leaked current in a semiconductor device by eliminating a bill-like lug of an isolating oxide region (LOCOS) and terminating the junction between diffused base and collector in the oxide region.
CONSTITUTION: An n+-type buried layer 2 is provided on a p-type silicon substrate 1 to epitaxially grow a silicon layer 3, to provide a non-oxidizable mask to thereby selectively oxidize it so as to thus form an oxide region 21. Then, the non-oxidizable mask is removed, an n--type layer is epitaxially grown on the exposed silicon surface to thus form regions 22a, 22b thereat. Then, boron is diffused in the region 22b, and a pn-junction is formed on the surface of the layer 3. Then, an emitter region 26, an emitter electrode 28a, a base electrode 28b, and a collector electrode 28c are formed thereon. Thus, since the collector junction is surrounded by the oxide region 21, no leaked current occurs to thereby obtain highly withstand voltage semiconductor device.
COPYRIGHT: (C)1980,JPO&Japio
JP13518079A 1979-10-22 1979-10-22 Fabricating method of semiconductor device having isolating oxide region Pending JPS5570043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13518079A JPS5570043A (en) 1979-10-22 1979-10-22 Fabricating method of semiconductor device having isolating oxide region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13518079A JPS5570043A (en) 1979-10-22 1979-10-22 Fabricating method of semiconductor device having isolating oxide region

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1258475A Division JPS5187979A (en) 1975-01-31 1975-01-31 BUNRYOSANKABUTSURYOIKIOJUSURU HANDOTAISOCHINOSEIZOHOHO

Publications (1)

Publication Number Publication Date
JPS5570043A true JPS5570043A (en) 1980-05-27

Family

ID=15145698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13518079A Pending JPS5570043A (en) 1979-10-22 1979-10-22 Fabricating method of semiconductor device having isolating oxide region

Country Status (1)

Country Link
JP (1) JPS5570043A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006325677A (en) * 2005-05-23 2006-12-07 Kiyoko Koyama Boot support

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952588A (en) * 1972-06-19 1974-05-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952588A (en) * 1972-06-19 1974-05-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006325677A (en) * 2005-05-23 2006-12-07 Kiyoko Koyama Boot support

Similar Documents

Publication Publication Date Title
JPS54100273A (en) Memory circuit and variable resistance element
JPS5586151A (en) Manufacture of semiconductor integrated circuit
JPS5730359A (en) Semiconductor device
GB1366892A (en) Methods of making semiconductor devices
JPS5524482A (en) Mono-cyrstalline silicon
JPS5570043A (en) Fabricating method of semiconductor device having isolating oxide region
JPS5583271A (en) Semiconductor device
JPS57128953A (en) Manufacture of semiconductor integrated circuit
JPS54149465A (en) Production of semiconductor device
JPS5687360A (en) Transistor device
JPS5570042A (en) Fabricating method of semiconductor device having isolating oxide region
JPS55108767A (en) Semiconductor device and manufacture of the same
JPS554973A (en) Lateral injection type transistor
JPS5788769A (en) Semiconductor device
JPS55107261A (en) Semiconductor integrated circuit device
JPS54154281A (en) Bipolar semiconductor device and its manufacture
JPS5718357A (en) Semiconductor device
JPS5563879A (en) Semiconductor device
JPS5640256A (en) Manufacture of semiconductor device
JPS54126478A (en) Transistor
JPS55128843A (en) Semiconductor device and method of fabricating the same
JPS54157475A (en) Semiconductor device
JPS54158889A (en) Manufacture of semiconductor device
JPS5382276A (en) Production of semiconductor device
JPS5496976A (en) Transistor for power