JPS55128843A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS55128843A
JPS55128843A JP3723679A JP3723679A JPS55128843A JP S55128843 A JPS55128843 A JP S55128843A JP 3723679 A JP3723679 A JP 3723679A JP 3723679 A JP3723679 A JP 3723679A JP S55128843 A JPS55128843 A JP S55128843A
Authority
JP
Japan
Prior art keywords
region
film
layer
type
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3723679A
Other languages
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3723679A priority Critical patent/JPS55128843A/en
Publication of JPS55128843A publication Critical patent/JPS55128843A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To improve the density of a semiconductor device by forming an emitter pickup electrode of polycrystalline silicon and a base pickup electrode of aluminum in a bipolar IC, and superimposing the electrodes in an architecture to set the interval between the electrodes at zero.
CONSTITUTION: An n+-type buried collector region 2 is diffused in a p-type silicon substrate 1, an n-type collector layer 5 is epitaxially grown on the entire surface, and the layer 5 is surrounded with an isolation oxide film 4 to form the layer 5 on the region 2 in an island state. A p-type region 6 is then diffused in the layer 5 becoming the island state, a polycrystalline silicon film 10 is accumulated on the layer 5 including the region 6, a Si3N4 film 11 is coated only on the emitter and collector regions, heat treated, and converted in the exposed film 10 into A SiO2 film 8. Thereafter, the film 11 is removed, with the film 8 as a mask As ion is implanted thereon to form an n-type emitter region 7 in the region 6 and an n-type contact region 5' in the layer 5, an opening is perforated at the film 8, and an aluminum wire 9" is coated from the region 6 over the SiO2 film 8' on the region 7.
COPYRIGHT: (C)1980,JPO&Japio
JP3723679A 1979-03-28 1979-03-28 Semiconductor device and method of fabricating the same Pending JPS55128843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3723679A JPS55128843A (en) 1979-03-28 1979-03-28 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3723679A JPS55128843A (en) 1979-03-28 1979-03-28 Semiconductor device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS55128843A true JPS55128843A (en) 1980-10-06

Family

ID=12491965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3723679A Pending JPS55128843A (en) 1979-03-28 1979-03-28 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55128843A (en)

Similar Documents

Publication Publication Date Title
JPS55128869A (en) Semiconductor device and method of fabricating the same
JPS54100273A (en) Memory circuit and variable resistance element
JPS55105344A (en) Semiconductor device
JPS55128843A (en) Semiconductor device and method of fabricating the same
JPS5541737A (en) Preparation of semiconductor device
JPS5596675A (en) Semiconductor device
JPS54149465A (en) Production of semiconductor device
JPS5583264A (en) Method of fabricating mos semiconductor device
JPS5456381A (en) Production of semiconductor device
JPS5541738A (en) Preparation of semiconductor device
JPS54158887A (en) Manufacture of semiconductor device
JPS54158889A (en) Manufacture of semiconductor device
JPS5469079A (en) Manufacture of semiconductor device
JPS5469089A (en) Semiconductor device
JPS5617054A (en) Manufacture of semiconductor device
JPS54128294A (en) Semiconductor device
JPS6415974A (en) Semiconductor device
JPS5570043A (en) Fabricating method of semiconductor device having isolating oxide region
JPS564272A (en) Semiconductor device
JPS55132053A (en) Manufacture of semiconductor device
JPS5587446A (en) Manufacture of semiconductor device
JPS5529187A (en) Production of semiconductor device
JPS5578571A (en) Manufacture of semiconductor device
JPS5787170A (en) Semiconductor device
JPS55125672A (en) Manufacture of semiconductor device