JPS5469079A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5469079A JPS5469079A JP13575277A JP13575277A JPS5469079A JP S5469079 A JPS5469079 A JP S5469079A JP 13575277 A JP13575277 A JP 13575277A JP 13575277 A JP13575277 A JP 13575277A JP S5469079 A JPS5469079 A JP S5469079A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- area
- occupied area
- base
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To secure the ultra-high speed action through an extreme reduction of the occupied area of the unit transistor by forming the base region with the Si layer forming the effective base layer and the poly-Si layer for lead-out use.
CONSTITUTION: N-epitaxial layer 23 is provided to P--type substrate 1 via N+- type buried layer 2a and then isolated via P+-layer 1a. And layer 2a is led out through N+-layer 2b. With the vapor growth of the N-epitaxial layer on insulating film 24, both single-crystal layer 25a and poly- crystal layer 25b are formed simultaneously. The selective etching is given after the P-type diffusion, and insulating film 34 is coated.Then N+-layer 26 and 2c are formed by giving the selective openings to film 24 and 34, and electrode 12, 35 and 36 are provided. In such constitution, the collector-base junction capacity is reduced greatly although the occupied area of the emitter is identical to the conventional area, thus featuring a high cut-off frequency. Furthermore, the occupied area of the element is reduced due to the reduction of the base layer area, thus obtaining a high concentration.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13575277A JPS5469079A (en) | 1977-11-14 | 1977-11-14 | Manufacture of semiconductor device |
US05/960,644 US4190949A (en) | 1977-11-14 | 1978-11-14 | Method for manufacturing a semiconductor device |
DE19782849373 DE2849373A1 (en) | 1977-11-14 | 1978-11-14 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
GB7844380A GB2010580B (en) | 1977-11-14 | 1978-11-14 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13575277A JPS5469079A (en) | 1977-11-14 | 1977-11-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5469079A true JPS5469079A (en) | 1979-06-02 |
Family
ID=15159029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13575277A Pending JPS5469079A (en) | 1977-11-14 | 1977-11-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469079A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS561556A (en) * | 1979-06-18 | 1981-01-09 | Hitachi Ltd | Semiconductor device |
JPS592369A (en) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | Semiconductor device |
JPS63239982A (en) * | 1987-03-27 | 1988-10-05 | Fujitsu Ltd | Manufacture of bipolar semiconductor device |
-
1977
- 1977-11-14 JP JP13575277A patent/JPS5469079A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS561556A (en) * | 1979-06-18 | 1981-01-09 | Hitachi Ltd | Semiconductor device |
JPH0123949B2 (en) * | 1979-06-18 | 1989-05-09 | Hitachi Ltd | |
JPS592369A (en) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | Semiconductor device |
JPS63239982A (en) * | 1987-03-27 | 1988-10-05 | Fujitsu Ltd | Manufacture of bipolar semiconductor device |
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