JPS5469079A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5469079A
JPS5469079A JP13575277A JP13575277A JPS5469079A JP S5469079 A JPS5469079 A JP S5469079A JP 13575277 A JP13575277 A JP 13575277A JP 13575277 A JP13575277 A JP 13575277A JP S5469079 A JPS5469079 A JP S5469079A
Authority
JP
Japan
Prior art keywords
layer
area
occupied area
base
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13575277A
Other languages
Japanese (ja)
Inventor
Tadashi Ikeda
Kazuo Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13575277A priority Critical patent/JPS5469079A/en
Priority to US05/960,644 priority patent/US4190949A/en
Priority to DE19782849373 priority patent/DE2849373A1/en
Priority to GB7844380A priority patent/GB2010580B/en
Publication of JPS5469079A publication Critical patent/JPS5469079A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To secure the ultra-high speed action through an extreme reduction of the occupied area of the unit transistor by forming the base region with the Si layer forming the effective base layer and the poly-Si layer for lead-out use.
CONSTITUTION: N-epitaxial layer 23 is provided to P--type substrate 1 via N+- type buried layer 2a and then isolated via P+-layer 1a. And layer 2a is led out through N+-layer 2b. With the vapor growth of the N-epitaxial layer on insulating film 24, both single-crystal layer 25a and poly- crystal layer 25b are formed simultaneously. The selective etching is given after the P-type diffusion, and insulating film 34 is coated.Then N+-layer 26 and 2c are formed by giving the selective openings to film 24 and 34, and electrode 12, 35 and 36 are provided. In such constitution, the collector-base junction capacity is reduced greatly although the occupied area of the emitter is identical to the conventional area, thus featuring a high cut-off frequency. Furthermore, the occupied area of the element is reduced due to the reduction of the base layer area, thus obtaining a high concentration.
COPYRIGHT: (C)1979,JPO&Japio
JP13575277A 1977-11-14 1977-11-14 Manufacture of semiconductor device Pending JPS5469079A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP13575277A JPS5469079A (en) 1977-11-14 1977-11-14 Manufacture of semiconductor device
US05/960,644 US4190949A (en) 1977-11-14 1978-11-14 Method for manufacturing a semiconductor device
DE19782849373 DE2849373A1 (en) 1977-11-14 1978-11-14 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
GB7844380A GB2010580B (en) 1977-11-14 1978-11-14 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13575277A JPS5469079A (en) 1977-11-14 1977-11-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5469079A true JPS5469079A (en) 1979-06-02

Family

ID=15159029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13575277A Pending JPS5469079A (en) 1977-11-14 1977-11-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5469079A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
JPS592369A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Semiconductor device
JPS63239982A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Manufacture of bipolar semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
JPH0123949B2 (en) * 1979-06-18 1989-05-09 Hitachi Ltd
JPS592369A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Semiconductor device
JPS63239982A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Manufacture of bipolar semiconductor device

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