JPS5534463A - Avalanche photodiode - Google Patents

Avalanche photodiode

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Publication number
JPS5534463A
JPS5534463A JP10720078A JP10720078A JPS5534463A JP S5534463 A JPS5534463 A JP S5534463A JP 10720078 A JP10720078 A JP 10720078A JP 10720078 A JP10720078 A JP 10720078A JP S5534463 A JPS5534463 A JP S5534463A
Authority
JP
Japan
Prior art keywords
multiplication
factor
region
low noise
noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10720078A
Other languages
Japanese (ja)
Inventor
Masanori Ito
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10720078A priority Critical patent/JPS5534463A/en
Publication of JPS5534463A publication Critical patent/JPS5534463A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain an avalanche photodiode of low noise and high multiplication by several multiplication regions.
CONSTITUTION: A π layer of the thickness of about 35 μm is allowed to grow epitaxially on a P+ substrate of Si, then ions are injected on the surface to make P layers P1, P2, N+ layers are diffused on the surface to make a pn junction J. When weak electric field is acted, a 1st carrier multiplication region Ab characterized by a low multiplication rate and an excessively low noise factor and a p-n junction are formed, while when heavy electric field is acted a 2nd carrier multiplication region Aa with a high multiplication rate and an excessively high noise factor is formed. Since an excessive noise factor F1(M1) of the region Ab is smaller than a factor F2(M2) of the region Aa, the noise factor F of the whole system can be nearly equal to the factor F1 for a large multiplication rate M1 low noise can be obtained and the multiplication rate M also can be increased because M=M1×M2. In this way low noise and high multiplication can be achieved.
COPYRIGHT: (C)1980,JPO&Japio
JP10720078A 1978-09-01 1978-09-01 Avalanche photodiode Pending JPS5534463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10720078A JPS5534463A (en) 1978-09-01 1978-09-01 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10720078A JPS5534463A (en) 1978-09-01 1978-09-01 Avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS5534463A true JPS5534463A (en) 1980-03-11

Family

ID=14453012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10720078A Pending JPS5534463A (en) 1978-09-01 1978-09-01 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5534463A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742176A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Optical semiconductor element
JP2002315656A (en) * 2001-04-24 2002-10-29 Molten Corp Mattress member
US8881328B2 (en) 2008-12-22 2014-11-11 Tempur-Pedic Management, Llc Body support with fluid system and method of operating same
US10827845B2 (en) 2017-02-24 2020-11-10 Sealy Technology, Llc Support cushions including a support insert with a bag for directing air flow, and methods for controlling surface temperature of same
US11160386B2 (en) 2018-06-29 2021-11-02 Tempur World, Llc Body support cushion with ventilation system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742176A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Optical semiconductor element
JPS6222545B2 (en) * 1980-08-28 1987-05-19 Fujitsu Ltd
JP2002315656A (en) * 2001-04-24 2002-10-29 Molten Corp Mattress member
US8881328B2 (en) 2008-12-22 2014-11-11 Tempur-Pedic Management, Llc Body support with fluid system and method of operating same
US10827845B2 (en) 2017-02-24 2020-11-10 Sealy Technology, Llc Support cushions including a support insert with a bag for directing air flow, and methods for controlling surface temperature of same
US11160386B2 (en) 2018-06-29 2021-11-02 Tempur World, Llc Body support cushion with ventilation system

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