JPS5742176A - Optical semiconductor element - Google Patents
Optical semiconductor elementInfo
- Publication number
- JPS5742176A JPS5742176A JP55118586A JP11858680A JPS5742176A JP S5742176 A JPS5742176 A JP S5742176A JP 55118586 A JP55118586 A JP 55118586A JP 11858680 A JP11858680 A JP 11858680A JP S5742176 A JPS5742176 A JP S5742176A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- concentration
- type
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To perfect the girdling effect while reducing the maximum electric field value at the breakdown of the junction surface at the light receiving section by a method wherein a layer the concentration thereof is relatively high but the width thereof is thin is inserted into a region of low impurity concentration, and further, the breakdown voltage of the junction surface at the light receiving section is made lower than that of the junction surface at the girdling section. CONSTITUTION:An n type InGaAs layer 22, an n type InP layer 25 with a concentration of 1X10<6>/cm<3> and a thickness of 0.5-1.0mum and n<-> type InP layer 26 with a concentration of <=5X105/cm<3> and a thickness of about 2mum are laid in layers on an n<+> type InP substrate 21 and epitaxially grown in vapor phase. Then, Cd is selectively diffused into the layer 26 to form a p<+> type region 23 which a junction depth of about 1.5mum as the girdling section while a p<+> type region 24 with a junction depth of about 0.5mum is formed by diffusion as the light receiving section in the region surrounded thereby with the end thereof extending to the region 23. Thereafter, an SiO2 film 27 covers the entire surface and then, is removed from the surfaces of the regions 23 and 24. An AuZn electrode 28 is coated on the region 23, while an AuGe electrode 29 is coated on the back of the substrate 21 respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55118586A JPS5742176A (en) | 1980-08-28 | 1980-08-28 | Optical semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55118586A JPS5742176A (en) | 1980-08-28 | 1980-08-28 | Optical semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5742176A true JPS5742176A (en) | 1982-03-09 |
| JPS6222545B2 JPS6222545B2 (en) | 1987-05-19 |
Family
ID=14740247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55118586A Granted JPS5742176A (en) | 1980-08-28 | 1980-08-28 | Optical semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5742176A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154276A (en) * | 1982-03-10 | 1983-09-13 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photo diode |
| US7538367B2 (en) | 2005-09-12 | 2009-05-26 | Mitsubishi Electric Corporation | Avalanche photodiode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52101990A (en) * | 1976-02-21 | 1977-08-26 | Hitachi Ltd | Semiconductor device for photoelectric transducer and its manufacture |
| JPS5534463A (en) * | 1978-09-01 | 1980-03-11 | Fujitsu Ltd | Avalanche photodiode |
-
1980
- 1980-08-28 JP JP55118586A patent/JPS5742176A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52101990A (en) * | 1976-02-21 | 1977-08-26 | Hitachi Ltd | Semiconductor device for photoelectric transducer and its manufacture |
| JPS5534463A (en) * | 1978-09-01 | 1980-03-11 | Fujitsu Ltd | Avalanche photodiode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154276A (en) * | 1982-03-10 | 1983-09-13 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photo diode |
| US7538367B2 (en) | 2005-09-12 | 2009-05-26 | Mitsubishi Electric Corporation | Avalanche photodiode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6222545B2 (en) | 1987-05-19 |
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