JPS5636171A - Zener diode and manufacture thereof - Google Patents

Zener diode and manufacture thereof

Info

Publication number
JPS5636171A
JPS5636171A JP11041379A JP11041379A JPS5636171A JP S5636171 A JPS5636171 A JP S5636171A JP 11041379 A JP11041379 A JP 11041379A JP 11041379 A JP11041379 A JP 11041379A JP S5636171 A JPS5636171 A JP S5636171A
Authority
JP
Japan
Prior art keywords
type
layer
type diffusion
diffusion layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11041379A
Other languages
Japanese (ja)
Inventor
Toshiaki Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11041379A priority Critical patent/JPS5636171A/en
Publication of JPS5636171A publication Critical patent/JPS5636171A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Abstract

PURPOSE:To simplify a manufacturing process, by making in an n type substrate a p<+> type region whose concentration is lower at the surface and deep part of the substrate and maximum at an appropriate depth from the surface and by making an n<+> type diffusion region to provide a p<+>-n<+> junction. CONSTITUTION:A p<+> type diffusion layer 5 is produced in an n type Si substrate 1 so that the concentration of the layer is maximum at an appropriate depth (d) from the surface of the substrate and lower near the surface. An anode A is in contact with the peripheral part of the surface of a p<-> type diffusion layer 6 whose concentration is low and which contains the p<+> type diffusion layer 5. An n<+> type diffusion layer 2 is provided in a part of the p<-> type diffusion layer 6 so that the layer 2 extends from the surface of the layer 6 to the p<+> type layer 5. A cathode K is provided in contact with the surface of the n<+> type diffusion layer 2.
JP11041379A 1979-08-31 1979-08-31 Zener diode and manufacture thereof Pending JPS5636171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11041379A JPS5636171A (en) 1979-08-31 1979-08-31 Zener diode and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11041379A JPS5636171A (en) 1979-08-31 1979-08-31 Zener diode and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5636171A true JPS5636171A (en) 1981-04-09

Family

ID=14535140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11041379A Pending JPS5636171A (en) 1979-08-31 1979-08-31 Zener diode and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5636171A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103473A (en) * 1980-01-23 1981-08-18 New Japan Radio Co Ltd Semiconductor device
JPS57169273A (en) * 1981-04-13 1982-10-18 Nippon Denso Co Ltd Semiconductor device
JPS5885571A (en) * 1981-11-17 1983-05-21 Sanyo Electric Co Ltd Controlling method for zener voltage
JPS60149152U (en) * 1984-03-15 1985-10-03 新日本無線株式会社 embedded zener diode
US5986327A (en) * 1989-11-15 1999-11-16 Kabushiki Kaisha Toshiba Bipolar type diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4897485A (en) * 1972-03-27 1973-12-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4897485A (en) * 1972-03-27 1973-12-12

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103473A (en) * 1980-01-23 1981-08-18 New Japan Radio Co Ltd Semiconductor device
JPS57169273A (en) * 1981-04-13 1982-10-18 Nippon Denso Co Ltd Semiconductor device
JPS5885571A (en) * 1981-11-17 1983-05-21 Sanyo Electric Co Ltd Controlling method for zener voltage
JPS60149152U (en) * 1984-03-15 1985-10-03 新日本無線株式会社 embedded zener diode
JPH0346507Y2 (en) * 1984-03-15 1991-10-01
US5986327A (en) * 1989-11-15 1999-11-16 Kabushiki Kaisha Toshiba Bipolar type diode

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