JPS647584A - Manufacture of semiconductor laser - Google Patents

Abstract

PURPOSE:To obtain an excellent property of mass production as well as reliability by using a vapor etching technique with hydrogen chloride to form a mesa shape, thereby embedding the mesa part without exposing a semiconductor structure to air. CONSTITUTION:Taking advantage of the fact that the etching speed of a mesa piece part by a vapor etching technique with hydrogen chloride is extremely slow in a normal pressure which is lacking in selectivity of composition, the vapor etching process with hydrogen chloride is used to form a mesa shape in the clad region 2 of a lower part of an active layer 3 and in succession from the preceding process, the mesa part is embedded without causing a semiconductor structure to be exposed to the air. Since a process ranging from the formation of a mesa stripe to its embedding can be performed without causing the semiconductor layer containing Al and the like to be exposed to the air, its embedded interface is not oxidized. In this way, the embedded type semiconductor laser which has the excellent reliability as well as property of mesa production is obtained.