JPS5654066A - Production of bevel type semiconductor - Google Patents

Production of bevel type semiconductor

Info

Publication number
JPS5654066A
JPS5654066A JP12884379A JP12884379A JPS5654066A JP S5654066 A JPS5654066 A JP S5654066A JP 12884379 A JP12884379 A JP 12884379A JP 12884379 A JP12884379 A JP 12884379A JP S5654066 A JPS5654066 A JP S5654066A
Authority
JP
Japan
Prior art keywords
groove
functional section
layer
diffusion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12884379A
Other languages
Japanese (ja)
Inventor
Junichi Oura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12884379A priority Critical patent/JPS5654066A/en
Publication of JPS5654066A publication Critical patent/JPS5654066A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Abstract

PURPOSE:To enhance the mechanical strength of the end of a functional section by making a vertical shallow groove on the main surface of the substrate so that a deep groove is formed slantly toward the normal of the main surface later while the functional section of the semiconductor is made inactive through the groove filled with an insulating substance surronding the functional section of a semiconductor. CONSTITUTION:An N<+> type collector layer 2 is formed by diffusion on the back of an N type Si substrate 1 while a P type base layer 3 is formed by diffusion on the surface. Then, the surface of the layer 3 is coated with an SiO2 film 5 on which a window is etched and an N type emitter region 4 is formed thereon by diffusion. The slant groove is constructed as follows: With a window etched on the film 5 corresponding to the groove 9, first a vertical shallow groove 7 is cut into the surface in such a manner as to be shallower than the base Conjunction and then the slant groove is formed closer to the functional section through here until it goes into the layer 2. In this manner, the side of the vertical groove 8 is partially left at the end of the functional section to strengthen the portion.
JP12884379A 1979-10-08 1979-10-08 Production of bevel type semiconductor Pending JPS5654066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12884379A JPS5654066A (en) 1979-10-08 1979-10-08 Production of bevel type semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12884379A JPS5654066A (en) 1979-10-08 1979-10-08 Production of bevel type semiconductor

Publications (1)

Publication Number Publication Date
JPS5654066A true JPS5654066A (en) 1981-05-13

Family

ID=14994751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12884379A Pending JPS5654066A (en) 1979-10-08 1979-10-08 Production of bevel type semiconductor

Country Status (1)

Country Link
JP (1) JPS5654066A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1601010A2 (en) * 2004-05-26 2005-11-30 St Microelectronics S.A. Formation of oblique trenches
US7521807B2 (en) * 2005-09-30 2009-04-21 Oki Semiconductor Co., Ltd. Semiconductor device with inclined through holes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1601010A2 (en) * 2004-05-26 2005-11-30 St Microelectronics S.A. Formation of oblique trenches
US7226870B2 (en) 2004-05-26 2007-06-05 Stmicroelectronics S.A. Forming of oblique trenches
EP1601010A3 (en) * 2004-05-26 2009-01-21 St Microelectronics S.A. Formation of oblique trenches
US7521807B2 (en) * 2005-09-30 2009-04-21 Oki Semiconductor Co., Ltd. Semiconductor device with inclined through holes

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