JPS548981A - Manufacture for diode - Google Patents

Manufacture for diode

Info

Publication number
JPS548981A
JPS548981A JP7518877A JP7518877A JPS548981A JP S548981 A JPS548981 A JP S548981A JP 7518877 A JP7518877 A JP 7518877A JP 7518877 A JP7518877 A JP 7518877A JP S548981 A JPS548981 A JP S548981A
Authority
JP
Japan
Prior art keywords
anode region
silicon layer
diode
manufacture
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7518877A
Other languages
Japanese (ja)
Inventor
Katsuhiro Oda
Takeshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7518877A priority Critical patent/JPS548981A/en
Publication of JPS548981A publication Critical patent/JPS548981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Abstract

PURPOSE:To reduce a forward voltage drop, by providing a silicon layer (layer i) onto a substrate when forming an anode region, by improving strength with the curvature of a junction curve part made large by deeply diffusing the anode region on the silicon layer, and by decreasing the impurity density of the surface by etching the anode region surface.
JP7518877A 1977-06-23 1977-06-23 Manufacture for diode Pending JPS548981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7518877A JPS548981A (en) 1977-06-23 1977-06-23 Manufacture for diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7518877A JPS548981A (en) 1977-06-23 1977-06-23 Manufacture for diode

Publications (1)

Publication Number Publication Date
JPS548981A true JPS548981A (en) 1979-01-23

Family

ID=13568965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7518877A Pending JPS548981A (en) 1977-06-23 1977-06-23 Manufacture for diode

Country Status (1)

Country Link
JP (1) JPS548981A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048743B2 (en) * 2009-06-12 2011-11-01 Hynix Semiconductor Inc. Method for fabricating vertical channel type nonvolatile memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048743B2 (en) * 2009-06-12 2011-11-01 Hynix Semiconductor Inc. Method for fabricating vertical channel type nonvolatile memory device

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