JPS53138286A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53138286A
JPS53138286A JP5259477A JP5259477A JPS53138286A JP S53138286 A JPS53138286 A JP S53138286A JP 5259477 A JP5259477 A JP 5259477A JP 5259477 A JP5259477 A JP 5259477A JP S53138286 A JPS53138286 A JP S53138286A
Authority
JP
Japan
Prior art keywords
substrate
manufacture
semiconductor device
forming
compand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5259477A
Other languages
Japanese (ja)
Inventor
Takayoshi Mamine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5259477A priority Critical patent/JPS53138286A/en
Publication of JPS53138286A publication Critical patent/JPS53138286A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce the substrate consumption by forming an etching compound layer different from the substrate onto the semiconductor substrate by injecting ions of one of O, C and N and by separating the substrate with the compand layer as a boundary after forming a device function part.
JP5259477A 1977-05-10 1977-05-10 Manufacture of semiconductor device Pending JPS53138286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5259477A JPS53138286A (en) 1977-05-10 1977-05-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5259477A JPS53138286A (en) 1977-05-10 1977-05-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53138286A true JPS53138286A (en) 1978-12-02

Family

ID=12919101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5259477A Pending JPS53138286A (en) 1977-05-10 1977-05-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53138286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999083A (en) * 1988-10-02 1991-03-12 Canon Kabushiki Kaisha Method of etching crystalline material with etchant injection inlet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999083A (en) * 1988-10-02 1991-03-12 Canon Kabushiki Kaisha Method of etching crystalline material with etchant injection inlet

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