JPS53118375A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS53118375A JPS53118375A JP3315877A JP3315877A JPS53118375A JP S53118375 A JPS53118375 A JP S53118375A JP 3315877 A JP3315877 A JP 3315877A JP 3315877 A JP3315877 A JP 3315877A JP S53118375 A JPS53118375 A JP S53118375A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacture
- semiconductor layer
- mis
- adjust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To adjust the threshold voltage to a prescribed level by controlling the thickness of the semiconductor layer when the MIS-type semiconductor device is formed to the semiconductor layer grown on the insulator substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3315877A JPS53118375A (en) | 1977-03-25 | 1977-03-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3315877A JPS53118375A (en) | 1977-03-25 | 1977-03-25 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53118375A true JPS53118375A (en) | 1978-10-16 |
JPS6110992B2 JPS6110992B2 (en) | 1986-04-01 |
Family
ID=12378753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3315877A Granted JPS53118375A (en) | 1977-03-25 | 1977-03-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53118375A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6068654A (en) * | 1983-08-25 | 1985-04-19 | Tadahiro Omi | Semiconductor integrated circuit |
JPS63237571A (en) * | 1987-03-26 | 1988-10-04 | Seiko Epson Corp | Manufacture of thin film transistor |
JPH0521794A (en) * | 1991-02-04 | 1993-01-29 | Semiconductor Energy Lab Co Ltd | Dieleciric gate type field effect semiconductor device and fabrication thereof |
JPH09270521A (en) * | 1996-12-09 | 1997-10-14 | Seiko Epson Corp | Thin film transistor manufacturing method |
JP2009004733A (en) * | 2007-05-18 | 2009-01-08 | Canon Inc | Inverter manufacturing method and inverter |
-
1977
- 1977-03-25 JP JP3315877A patent/JPS53118375A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6068654A (en) * | 1983-08-25 | 1985-04-19 | Tadahiro Omi | Semiconductor integrated circuit |
JPS63237571A (en) * | 1987-03-26 | 1988-10-04 | Seiko Epson Corp | Manufacture of thin film transistor |
JPH0521794A (en) * | 1991-02-04 | 1993-01-29 | Semiconductor Energy Lab Co Ltd | Dieleciric gate type field effect semiconductor device and fabrication thereof |
JPH09270521A (en) * | 1996-12-09 | 1997-10-14 | Seiko Epson Corp | Thin film transistor manufacturing method |
JP2009004733A (en) * | 2007-05-18 | 2009-01-08 | Canon Inc | Inverter manufacturing method and inverter |
Also Published As
Publication number | Publication date |
---|---|
JPS6110992B2 (en) | 1986-04-01 |
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