JPS5676567A - Manufacture of thyristor - Google Patents

Manufacture of thyristor

Info

Publication number
JPS5676567A
JPS5676567A JP15543179A JP15543179A JPS5676567A JP S5676567 A JPS5676567 A JP S5676567A JP 15543179 A JP15543179 A JP 15543179A JP 15543179 A JP15543179 A JP 15543179A JP S5676567 A JPS5676567 A JP S5676567A
Authority
JP
Japan
Prior art keywords
region
wafer substrate
type
element forming
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15543179A
Other languages
Japanese (ja)
Inventor
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15543179A priority Critical patent/JPS5676567A/en
Publication of JPS5676567A publication Critical patent/JPS5676567A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Abstract

PURPOSE:To reduce the voltage drop when a thyristor is conducted by forming a step in a p type emitter region and forming the width of the n type base region thin in the element forming portion and thick in the mesa forming part. CONSTITUTION:A recess 11 (a depth of deeper than 10mum) is formed by etching the main surface of the side to be formed with a p type emitter region 5a of the element forming part of an n type wafer substrate. Then, p type emitter region 5a and p type base region 4 are so formed on both main surfaces of the wafer substrate that the width of the region 5a is thicker than the width of the base 4, and the residue of the wafer substrate is formed as an n type base region 3. Thereafter, n type emitter region 6 is formed at the predetermined part of the surface part of the region 4, and n type base region 3 and the mesa groove 7 reaching the recess 11 are formed from both main surface of the wafer substrate between the element forming parts and between the element forming part and the peripheral edge of the wafer substrate.
JP15543179A 1979-11-27 1979-11-27 Manufacture of thyristor Pending JPS5676567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15543179A JPS5676567A (en) 1979-11-27 1979-11-27 Manufacture of thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15543179A JPS5676567A (en) 1979-11-27 1979-11-27 Manufacture of thyristor

Publications (1)

Publication Number Publication Date
JPS5676567A true JPS5676567A (en) 1981-06-24

Family

ID=15605861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15543179A Pending JPS5676567A (en) 1979-11-27 1979-11-27 Manufacture of thyristor

Country Status (1)

Country Link
JP (1) JPS5676567A (en)

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