JPS5680175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5680175A
JPS5680175A JP15879679A JP15879679A JPS5680175A JP S5680175 A JPS5680175 A JP S5680175A JP 15879679 A JP15879679 A JP 15879679A JP 15879679 A JP15879679 A JP 15879679A JP S5680175 A JPS5680175 A JP S5680175A
Authority
JP
Japan
Prior art keywords
electrode
main surface
peripheral
flank
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15879679A
Other languages
Japanese (ja)
Inventor
Yasuhiko Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15879679A priority Critical patent/JPS5680175A/en
Publication of JPS5680175A publication Critical patent/JPS5680175A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent short circuit between a circumferential end section of a semiconductor substrate and a heat sink at the anode side by a method wherein the peripheral section of a main surface with a projecting electrode of the semiconductor substrate and one section of a flank continuing to the peripheral section thereof are coated with an electric insulating film. CONSTITUTION:With a double-heat sink-diode (DHD) type semiconductor base body 6, a P type region 2 is formed on a main surface of a substrate 1 consisting of an N type region, a projecting electrode (anode electrode) 3 is made up on the P type region as a drawing electrode, and a metallized electrode 4 is built up on the opposite flank of the main surface. An electric insulating film (oxide film) 5 is formed to a peripheral section 7 of the main surface and in a shape that is extended up to one part 8a of a peripheral flank 8 continuing to the peripheral section 7. Since a groove 12 is made up to the one part 8a of the peripheral flank by previously etching it at a prearranged location to be finally cut, the film 5 can be built up which being extended to the 8a part at the same time when forming the film 5 at a preceding stage making up the electrode 3.
JP15879679A 1979-12-04 1979-12-04 Semiconductor device Pending JPS5680175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15879679A JPS5680175A (en) 1979-12-04 1979-12-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15879679A JPS5680175A (en) 1979-12-04 1979-12-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5680175A true JPS5680175A (en) 1981-07-01

Family

ID=15679527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15879679A Pending JPS5680175A (en) 1979-12-04 1979-12-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680175A (en)

Similar Documents

Publication Publication Date Title
ES8507730A1 (en) Method of forming ohmic contacts.
JPS56114361A (en) Semiconductor container
JPS5680175A (en) Semiconductor device
JPS5331964A (en) Production of semiconductor substrates
JPS5338262A (en) Semiconductor connection system
JPS5394775A (en) Manufacture of semiconductor device
JPS5676568A (en) Manufacture of thyristor
FR2172200B1 (en)
JPS5496366A (en) Semiconductor device
JPS5376728A (en) Microwave circuit
JPS5636159A (en) Schottky diode
JPS5240962A (en) Fluorescent tube
JPS57100719A (en) Manufacture of semiconductor device
JPS5287988A (en) High dielectric strength semiconductor device
JPS5372584A (en) Circuit element
JPS5724565A (en) Semiconductor circuit element
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS5297679A (en) Semiconductor rectifying element
JPS5353988A (en) Semiconductor integrated circuit
JPS5353965A (en) Semiconductor device and its production
JPS5325350A (en) Dicing method of semiconductor substrates
JPS5632754A (en) Hybrid integrated circuit
JPS5345149A (en) Circulator
JPS5754347A (en) Selective oxidation
JPS5414167A (en) Manufacture for integrated circuit