JPS5632754A - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JPS5632754A
JPS5632754A JP10783879A JP10783879A JPS5632754A JP S5632754 A JPS5632754 A JP S5632754A JP 10783879 A JP10783879 A JP 10783879A JP 10783879 A JP10783879 A JP 10783879A JP S5632754 A JPS5632754 A JP S5632754A
Authority
JP
Japan
Prior art keywords
emitter
electrodes
resistance
insulating substrate
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10783879A
Other languages
Japanese (ja)
Inventor
Kunitsugu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10783879A priority Critical patent/JPS5632754A/en
Publication of JPS5632754A publication Critical patent/JPS5632754A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To improve the frequency characteristics of the hybrid integrated circuit by forming an emitter film resistance on the back surface of an emitter electrode in an emitter-resistance feedback type transistor amplifying circuit formed on an insulating substrate, and connecting the resistance to the grounding electrode, thereby reducing its lead inductance. CONSTITUTION:Collector electrodes 11, 11', base electrodes 12, 12', and emitter electrodes 10, 10' are formed on an insulating substrate, and an emitter resistance feedback type transistor amplifying circuit is thus formed. Emitter film resistance 20, 20' are formed on the back surfaces of the electrodes 10, 10' respectively in this configuration, and are made contact with grounding electrode patterns 30, 30' formed on the insulating substrate. In this manner the resistances 20, 20' formed between the electrodes 10, 10' and the patterns 30, 30' and lead inductances 40, 40' form an inductance, which can be cancelled by the capacitances 50, 50' formed similarly therebetween, the decrease in the gain in high frequency band can be eliminated, and the frequency characteristics thereof can be thus improved.
JP10783879A 1979-08-24 1979-08-24 Hybrid integrated circuit Pending JPS5632754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10783879A JPS5632754A (en) 1979-08-24 1979-08-24 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10783879A JPS5632754A (en) 1979-08-24 1979-08-24 Hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS5632754A true JPS5632754A (en) 1981-04-02

Family

ID=14469321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10783879A Pending JPS5632754A (en) 1979-08-24 1979-08-24 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS5632754A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0579293A1 (en) * 1989-07-14 1994-01-19 Motorola, Inc. Hybrid amplifier
JP2017195510A (en) * 2016-04-20 2017-10-26 三菱電機株式会社 Integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240776A (en) * 1975-09-26 1977-03-29 Nippon Electric Co Film circuit unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240776A (en) * 1975-09-26 1977-03-29 Nippon Electric Co Film circuit unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0579293A1 (en) * 1989-07-14 1994-01-19 Motorola, Inc. Hybrid amplifier
JP2017195510A (en) * 2016-04-20 2017-10-26 三菱電機株式会社 Integrated circuit

Similar Documents

Publication Publication Date Title
JPS55140251A (en) Semiconductor device
JPS54120587A (en) Transistor
JPS57104265A (en) Semiconductor device
JPS5632754A (en) Hybrid integrated circuit
JPS55150271A (en) Semiconductor device
JPS5533073A (en) High frequency transistor
JPS5684017A (en) High frequency hybrid integrated circuit
JPS5582459A (en) Transistor
JPS5736860A (en) Semiconductor device
JPS55117274A (en) Semiconductor device
JPS5582515A (en) Transistor amplifier
JPS5519855A (en) Thin film condenser and manufacture thereof
JPS57206062A (en) Semiconductor integrated circuit
JPS6425452A (en) Semiconductor device
JPS5626463A (en) Semiconductor integrated circuit capacity
JPS566463A (en) Integrated resistor
JPS5515228A (en) Transistor with high frequency matching circuit
JPS5645071A (en) Semiconductor device
JPS57102068A (en) Semiconductor integrated circuit
JPS5779657A (en) Semiconductor device
JPS5712546A (en) Semiconductor device and its manufacture
JPS5630758A (en) Negative feedback type bipolar transistor
JPS5762547A (en) Semiconductor device
JPS5365041A (en) Active two terminal impedance circuit
JPS56150848A (en) Semiconductor integrated circuit and lateral transistor