JPS5515228A - Transistor with high frequency matching circuit - Google Patents

Transistor with high frequency matching circuit

Info

Publication number
JPS5515228A
JPS5515228A JP8795278A JP8795278A JPS5515228A JP S5515228 A JPS5515228 A JP S5515228A JP 8795278 A JP8795278 A JP 8795278A JP 8795278 A JP8795278 A JP 8795278A JP S5515228 A JPS5515228 A JP S5515228A
Authority
JP
Japan
Prior art keywords
electrode
butt
matching circuit
chip
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8795278A
Other languages
Japanese (ja)
Inventor
Kazuo Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8795278A priority Critical patent/JPS5515228A/en
Publication of JPS5515228A publication Critical patent/JPS5515228A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce an operation Q and obtain a stable operation over a wide range by raising a nominal impedance of a chip with a matching circuit with a monolithic construction in a transistor chip.
CONSTITUTION: A collector, emitter and base layer are provided in a semiconductor chip 5 to make an electrode as a pattern a. A base electrode 22 is arranged to surround an emitter electrode 21 and a bond butt 8a and 8b are prepared. An insulation layer 27 is provided thereon, a hole for passing through the layer 27 is provided in a position 24a, it is connected to a second electrode 23 and is connected through a third electrode 25 and insulation layer 28 in a position 23b. Successively, an electrode butt 6 is prepared. The third electrode 25 is connected at the connection point 25 to the butt 6. A capacitance is made by the butt 6 and 8b and the electrode 23 and 25 serve as an inductance. The chip 5 with such a construction is mounted on a package with an internal matching circuit. Therefore, an impedance matching capacitance 10 can be formed in a small size, whereby the input impedance is raised and a stable operation can be obtained over a wide range.
COPYRIGHT: (C)1980,JPO&Japio
JP8795278A 1978-07-19 1978-07-19 Transistor with high frequency matching circuit Pending JPS5515228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8795278A JPS5515228A (en) 1978-07-19 1978-07-19 Transistor with high frequency matching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8795278A JPS5515228A (en) 1978-07-19 1978-07-19 Transistor with high frequency matching circuit

Publications (1)

Publication Number Publication Date
JPS5515228A true JPS5515228A (en) 1980-02-02

Family

ID=13929208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8795278A Pending JPS5515228A (en) 1978-07-19 1978-07-19 Transistor with high frequency matching circuit

Country Status (1)

Country Link
JP (1) JPS5515228A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142375U (en) * 1983-03-14 1984-09-22 株式会社泉精器製作所 door check
JPS6359011A (en) * 1986-08-27 1988-03-14 Asia Electron Kk High density integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142375U (en) * 1983-03-14 1984-09-22 株式会社泉精器製作所 door check
JPS6359011A (en) * 1986-08-27 1988-03-14 Asia Electron Kk High density integrated circuit
JPH0517725B2 (en) * 1986-08-27 1993-03-10 Asia Electronics

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