JPS5591134A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5591134A
JPS5591134A JP16303578A JP16303578A JPS5591134A JP S5591134 A JPS5591134 A JP S5591134A JP 16303578 A JP16303578 A JP 16303578A JP 16303578 A JP16303578 A JP 16303578A JP S5591134 A JPS5591134 A JP S5591134A
Authority
JP
Japan
Prior art keywords
source
drain
electrodes
areas
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16303578A
Other languages
Japanese (ja)
Other versions
JPS5917979B2 (en
Inventor
Yasuro Mitsui
Manabu Watase
Michihiro Kobiki
Mutsuyuki Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53163035A priority Critical patent/JPS5917979B2/en
Publication of JPS5591134A publication Critical patent/JPS5591134A/en
Publication of JPS5917979B2 publication Critical patent/JPS5917979B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve high frequency characteristic by projecting only the source bonding area of the chip loading body higher than the other areas with a conductive buffers between the other areas when a three-terminal semiconductor chip of a flip flop structure is mounted to the body.
CONSTITUTION: Source, drain and gate projected electrodes 1, 2 and 3 are separately provided on a three-terminal semiconductor chip to form a flip chip of a source- grounded GaAs FET element. Then, the electrodes are bonded on a chip loading body 9 made up of a grounding metal plate 10. In this process, the source grounding area 11 is projected high enough at the center to have the electrode 1 bonded thereon. The drain and gate areas 13 and 14 positioned sandwitching the area 11 are set so lower in the height of the metal plate as to have ceramic substrates 12a and 12b thereon. The electrodes 2 and 3 are respectively brought into contact with the ceramic substrates through drain and gate connection buffers 15 and 16 each comprising gold. In this manner, parasitic resistance at the contact part can be reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP53163035A 1978-12-28 1978-12-28 semiconductor equipment Expired JPS5917979B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53163035A JPS5917979B2 (en) 1978-12-28 1978-12-28 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53163035A JPS5917979B2 (en) 1978-12-28 1978-12-28 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5591134A true JPS5591134A (en) 1980-07-10
JPS5917979B2 JPS5917979B2 (en) 1984-04-24

Family

ID=15765938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53163035A Expired JPS5917979B2 (en) 1978-12-28 1978-12-28 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5917979B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57101534U (en) * 1980-12-10 1982-06-22
JPS58106875A (en) * 1981-12-04 1983-06-25 ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレイシヨン Microwave field effect transistor
JPS62144346A (en) * 1985-12-19 1987-06-27 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit element
US4843440A (en) * 1981-12-04 1989-06-27 United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Microwave field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57101534U (en) * 1980-12-10 1982-06-22
JPS6245475Y2 (en) * 1980-12-10 1987-12-04
JPS58106875A (en) * 1981-12-04 1983-06-25 ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレイシヨン Microwave field effect transistor
US4843440A (en) * 1981-12-04 1989-06-27 United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Microwave field effect transistor
JPS62144346A (en) * 1985-12-19 1987-06-27 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit element

Also Published As

Publication number Publication date
JPS5917979B2 (en) 1984-04-24

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