JPS5917979B2 - semiconductor equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to a semiconductor device having a three-terminal semiconductor chip of flip-chip configuration.

FIG. 1 is a perspective view of essential parts of an example of a conventional flip-chip GaAsFET.

In the same figure. 1 is a source protrusion electrode formed by thick plating.

2 and 3 are a drain protrusion electrode and a gate protrusion electrode formed on the drain electrode pad 4 and the gate electrode pad 5, respectively.

6 and □ are the drain electrode and gate electrode, respectively.

The drain electrode 6, the gate electrode 7, and the source protruding electrode 1 are formed periodically and continuously at a predetermined distance from each other. FIG. 2 is a sectional view taken along the line AA' in FIG. 1 when the conventional flip-chip GaAsFET shown in FIG. 1 is mounted on a flip-chip mounting body.

In the figure, 8 is a GaAsFET flip chip with a common source 5, 9 is a flip chip mounting body to which the GaAsFET flip chip 8 is mounted, 10 is a grounding metal substrate of the flip chip mounting body 9, and 11 is a grounding metal substrate 10. V is a convex portion provided on the surface of V, and this convex portion 11
is a source bonding area to which the source protruding electrode 1 is bonded. Reference numerals 12a and 12b are first and second ceramic substrates on which drain bonding areas 13 and gate bonding areas 14 are formed in correspondence with the drain protrusion electrodes 2 and gate protrusion electrodes 3, respectively.

The first and second ceramic substrates 12a,
12b are each attached to the surface of the grounding metal substrate 10 with the source bonding area 11 in between. 30 In such a configuration, when bonding the flip chip 8 to the flip chip mounting body 10, if the surfaces of the convex portion 11, drain bonding area 13, and gate bonding area 14 are not formed on the same plane, the source protrusion 35 electrode 1, drain protrusion electrode 2, gate protrusion electrode 3, and corresponding protrusion I
The li drain bonding area 13 and the gate bonding area 14 will not be reliably connected throughout.

for example. When the thickness of each of the protruding electrodes 1, 2, and 3 on the flip chip 8 of the GaAsFET is approximately several tens of microns, the width is several hundred microns or less, and the distance between each of the protruding electrodes 1, 2, and 3 is several hundred microns or less6. Convex portion 11. If the level difference on each surface of the drain bonding area 136 and the gate bonding area 14 is on the order of several tens of microns or more, the protruding electrodes may be deformed or may not contact each other at all due to a gap between the protruding electrode and the bonding area. However, it is practically difficult to suppress the surface level difference of a flip chip mounting body to less than a few tens of microns, so flip chips with such a configuration lead to a decrease in assembly yield and to problems with contact between the source, drain, and gate electrodes. This caused an increase in resistance and a deterioration of the six-element characteristics. Therefore, the present invention has been made in view of the above-mentioned drawbacks, and provides a high-output flip chip that ensures electrical connection between each protruding electrode on the 6-flip chip and the flip-chip mounting body and reduces the contact resistance of the 6-electrode portion. The object of the present invention is to provide a structural semiconductor device.

Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 3 shows GaAsF for flip-chip construction according to the present invention.
FIG. 4 is a perspective view of the main part showing an example of ET.
FIG. 2 is a sectional view of a main part showing a state in which an ET is mounted on a flip-chip mounting body according to the present invention, and since the same symbols as in FIGS. 1 and 2 represent the same elements, a description thereof will be omitted.

first. In FIG. 3, reference numeral 15 denotes a drain connection buffer made of a conductor such as a gold ribbon, which connects each of the drain protruding electrodes 2 together in a wavy manner, and 16 denotes a drain connection buffer made of a conductor such as a gold ribbon, which connects each of the gate protruding electrodes 3 and connects them in a wavy manner. gate connection buffer made of a conductor such as gold ribbon. Further, in FIG. 4, the surface of the convex portion 11 forming the source bonding area is . It is set in advance to be slightly higher than the respective surfaces of the drain bonding area 13 and the gate bonding area 14. In this way, in the structure in which the flip chip shown in FIG. 3 is mounted on the flip chip mounting body shown in FIG.
4, and the drain connection buffer 15 on the flip chip 8 to be mounted and the gate connection buffer 16 play the role of springs, so the manufacturing accuracy of the flip chip mounting body is poor. However, it becomes possible to reliably connect each electrode on the 6-flip chip to each bonding area of the 7-flip chip mounting body with a high yield.

As a result, the parasitic source resistance RS6, the parasitic drain resistance Rd, and the parasitic gate resistance Rg at the contact portion can be reduced, and the high frequency characteristics of the device are improved. FIG. 5 is a characteristic curve diagram showing a typical frequency characteristic of the unidirectional gain of a flip-chip component having a total gate width of 1600 μm.

In the same figure. The curve is a characteristic curve of a device using a conventional flip chip and a flip chip mounting body, and the curve is a characteristic curve of a device using a flip chip and a flip chip mounting body according to the present invention. As shown in the figure, the conventional flip chip and the device using the flip chip mounting body. While the maximum oscillation frequency is approximately 20 GHz, the maximum oscillation frequency of the device using the flip chip and its attached body according to the present invention is approximately 30 GHz, which is an improvement of approximately 10 GHz, and is extremely effective in improving microwave characteristics. be. In the above embodiments, the case where the source is grounded is explained, but the present invention is not limited to this, and can be applied to the case where the drain is grounded or the gate is grounded.

Also, based on the above example. Although the GaAsFET flip chip has been described, the present invention is not limited thereto. Other microwave power FETs,
It can also be applied to flip-chip semiconductor chips such as MOS transistors and thin film transistors, and flip-chip mounting bodies on which they are mounted.

Further, in the above embodiment, a case was explained in which a corrugated gold ribbon was used as the buffer connection part, but the present invention is not limited to this, and other shapes or materials having a spring effect may be used. Of course, the same effect can be obtained by using, for example, a gold wire.

As explained above, according to the present invention, the second and third protruding electrodes that are not grounded are periodically arranged on both sides of the first protruding electrode that is to be grounded, and are connected in a wavy manner by a conductive buffer,
In addition, since the bonding area on the flip-chip mounting body to which the first protruding electrode to be grounded is to be connected is set higher than the bonding area to which the other first and second protruding electrodes are to be connected, the above-mentioned flip-chip Even if the flip-chip mounting body has an unavoidable error in machining accuracy when the flip-chip mounting body is mounted on the flip-chip mounting body, each protruding electrode can be reliably connected to each bonding area with a high yield.

As a result, extremely excellent effects such as a dramatic improvement in microwave characteristics can be obtained.

[Brief explanation of the drawing]

Figure 1 is a perspective view of the main parts of an example of a conventional flip-chip GaAsFET. FIG. 2 is a cross-sectional view of the main part of the flip chip shown in FIG. 1 mounted on a conventional flip chip mounting body, and FIG.
FIG. 4 is a sectional view of essential parts showing an example of the flip chip shown in FIG. 3 mounted on the flip chip mounting body of the present invention, and FIG. 5 is a perspective view of the main parts showing an example of an sFET FIG. 3 is a characteristic curve diagram comparing the frequency range of the unidirectional gain of the device using the semiconductor device with that of the conventional flip-chip component. 1... Source protrusion electrode 62... Drain protrusion electrode, 3... Gate protrusion electrode. 8...
...flip chip. 9...Flip chip attachment body, 11...Source bonding area, 13...Drain bonding area.
14...Gate bonding area, 15.
...Drain connection buffer. 16...Gate connection buffer.

Claims (1)

[Claims] 1. A semiconductor chip having a flip-chip configuration in which second protruding electrodes that are not grounded and third protruding electrodes that are not grounded and are periodically arranged on both sides of a first protruding electrode that is to be grounded are connected to each other by a conductive buffer. The surface of the bonding area where the first protruding electrode to be grounded is attached is connected to the second and third electrodes.
What is claimed is: 1. A semiconductor device mounted on a flip-chip mounting body that is higher than the surface of a bonding area to which a protruding electrode is mounted.