JPH0697352A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

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Publication number
JPH0697352A
JPH0697352A JP27241392A JP27241392A JPH0697352A JP H0697352 A JPH0697352 A JP H0697352A JP 27241392 A JP27241392 A JP 27241392A JP 27241392 A JP27241392 A JP 27241392A JP H0697352 A JPH0697352 A JP H0697352A
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JP
Japan
Prior art keywords
semiconductor chip
inner lead
resin
semiconductor device
inner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27241392A
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Japanese (ja)
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JP3232696B2 (en
Inventor
Kenji Osawa
健治 大沢
Original Assignee
Sony Corp
ソニー株式会社
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Application filed by Sony Corp, ソニー株式会社 filed Critical Sony Corp
Priority to JP27241392A priority Critical patent/JP3232696B2/en
Publication of JPH0697352A publication Critical patent/JPH0697352A/en
Application granted granted Critical
Publication of JP3232696B2 publication Critical patent/JP3232696B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE:To prevent short circuit between an inner lead and the edge of a semiconductor chip by extending the inner lead obliquely such that the inner lead recedes gradually from the semiconductor chip toward the outside. CONSTITUTION:An inner lead 4 is formed through a bump 3 to recede from a semiconductor chip 1 gradually from the inner end connected with an electrode 2 of the semiconductor chip 1 toward the outside, i.e., to extend obliquely upward. The inner lead is exposed, at the outer end thereof, such that the bottom surface thereof is connected through an intermediate material 5 with the top surface of an outer lead 6 while the top surface thereof is made flash with the top surface of sealing resin 7. This constitution suppresses short circuit between the inner lead 4 and the edge of the semiconductor chip 1.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、樹脂封止型半導体装置、特にインナーリードと半導体チップのエッジとの間のショート不良が発生する虞れがなく、また半導体チップとリードとの接合部に加わる熱ストレスを緩和することができる樹脂封止型半導体装置に関する。 The present invention relates to a resin-sealed semiconductor device, especially short failure without fear of generating between the inner lead and the semiconductor chip edges, also at the junction between the semiconductor chip and the lead a resin-sealed semiconductor device which is capable of alleviating the thermal stress applied.

【0002】 [0002]

【従来の技術】図5(A)及び(B)は樹脂封止型半導体装置の従来例を示すもので、(A)は一部切欠斜視図、(B)は(A)のB−B線視断面図である。 BACKGROUND ART FIG. 5 (A) and (B) is shows an example of a conventional resin-sealed semiconductor device, (A) is partially cutaway perspective view, (B) is B-B of (A) it is a diagrammatic sectional view. 図5において、1は半導体チップ、2、2、…は該半導体チップ1に形成された電極、3、3、…はバンプ、4、4、 5, 1 denotes a semiconductor chip, 2,2, ... is formed on the semiconductor chip 1 electrodes 3,3, ... bump, 4,4,
…は一端が該バンプ3、3、…を介して半導体チップの電極2、2、…に接続されたインナーリードで、例えば銅からなる。 ... in one end the bump 3,3, electrodes 2,2 of the semiconductor chip through the ..., inner leads connected ..., for example made of copper.

【0003】5、5、…はインナーリード4、4、、… [0003] 5,5, ... the inner lead 4, 4 ,, ...
の他端に形成された例えばアルミニウムからなる中間材(エッチングストッパ)で、インナーリード4、4、… An intermediate member composed of the other end formed for example of aluminum (etching stopper), the inner lead 4, 4, ...
の該他端には該中間材5、5、…を介してアウターリード6、6、…の一端が接続されている。 Intermediate material 5,5 to other end, the outer leads 6 and 6 through ..., ... one end of which is connected to. 尚、インナーリード4、4、…とアウターリード6、6、…からなるリードフレームの製造方法については、本願出願人会社から特願平3−306669号等により各種提案が為されている。 Incidentally, the inner lead 4, 4, ... and the outer leads 6 and 6, a method of manufacturing a lead frame made of ... is various proposals have been made by the Japanese Patent Application No. Hei 3-306669 and the like from the present Applicant Company. 7は封止樹脂である。 7 is a sealing resin. 従来の樹脂封止型半導体装置は、図5に示すように、インナーリード4、4、… The conventional resin-sealed semiconductor device, as shown in FIG. 5, the inner lead 4, 4, ...
が水平方向(平面方向)に延びていた。 It was extended in the horizontal direction (planar direction).

【0004】 [0004]

【発明が解決しようとする課題】ところで、図5に示す従来の樹脂封止型半導体装置は、インナーリード4、 [SUMMARY OF THE INVENTION Incidentally, the conventional resin-sealed semiconductor device shown in FIG. 5, the inner lead 4,
4、…が水平方向(平面方向)に延びていたので、半導体チップ1のエッジとインナーリード4との間で接触が生じ易く、ショート不良の発生率が無視できない程高く、樹脂封止型半導体装置の小型化、薄型化に応えようとする程その発生率が高くなる傾向にあった。 4, since ... was extended in the horizontal direction (planar direction), the contact tends to occur between the edge and the inner lead 4 semiconductor chip 1, as high as the incidence of short-circuit fault can not be ignored, the resin-encapsulated semiconductor miniaturization of the apparatus, there was as much as a tendency that the occurrence rate increases to try to live up to the thinner.

【0005】また、半導体チップ1とリード4とは線熱膨張係数に大きな違いがあるので、インナーリード4を水平に形成すると熱応力がインナーリード4と半導体チップ1の電極2とのバンプ3を介しての接合部に加わり、その接合部あるいはその近傍部分がダメージを受けるという問題があった。 Further, since the semiconductor chip 1 and the leads 4 is a big difference in the linear thermal expansion coefficient, the thermal stress when the inner leads 4 horizontally formed bump 3 to the electrode 2 of the inner lead 4 and the semiconductor chip 1 It applied to the joint through the junction or its vicinity that there has been a problem that damaged.

【0006】本発明はこのような問題点を解決すべく為されたものであり、半導体チップのエッジとインナーリードとのショート不良をなくし、かつ半導体チップとインナーリードの接合部に熱応力が集中するのを防止することを目的とする。 [0006] The present invention has been made to solve the above problems, eliminating the short circuit between the semiconductor chip edge and the inner lead, and thermal stress is concentrated on the junction of the semiconductor chip and the inner leads an object of the present invention is to prevent the.

【0007】 [0007]

【課題を解決するための手段】請求項1の樹脂封止型半導体装置は、半導体チップの各電極に接続したインナーリードを外側に行くに従って該半導体チップから離れる方向に斜めに延びるように形成したことを特徴とする。 Means for Solving the Problems] resin-sealed semiconductor device according to claim 1 was formed so as to extend obliquely in a direction away from the semiconductor chip toward the inner leads connected to the electrodes of the semiconductor chip to the outside it is characterized in.
請求項2の樹脂封止型半導体装置は、請求項1の樹脂封止型半導体装置において、各インナーリードのアウターリードと接続された外端部表面が封止樹脂の表面から露出せしめられてなることを特徴とする。 Resin-sealed semiconductor device according to claim 2, in the resin sealing type semiconductor device according to claim 1, the outer leads and connected to the outer end surface of each inner lead are thus caused to expose the surface of the sealing resin it is characterized in.

【0008】 [0008]

【作用】請求項1の樹脂封止型半導体装置によれば、インナーリードが外側に行くに従って該半導体チップから離れる方向に斜めに延びているので、半導体チップのエッジとショートする虞れがなくなるし、また、熱ストレスをインナーリードが曲ることによって吸収して熱ストレスのインナーリードと半導体チップの電極との接合部への集中を防止することができる。 SUMMARY OF] According to the resin-sealed semiconductor device according to claim 1, since the inner lead extends obliquely in a direction away from the semiconductor chip toward the outside, to fear disappears a short circuit and the edge of the semiconductor chip in addition, it is possible to heat stress is absorbed by the inner lead flexes to prevent the concentration of the junction between the inner lead and the semiconductor chip electrodes of the thermal stress. 請求項2の樹脂封止型半導体装置によれば、インナーリードの外端を露出せしめたので封止樹脂を徒らに厚くすることなく半導体チップのエッジとインナーリードとのショート不良防止、 According to a resin-sealed semiconductor device according to claim 2, short circuit prevention between the semiconductor chip edge and the inner lead without increasing the sealing resin taken since allowed exposed outer ends of inner leads,
熱ストレスのインナーリードと半導体チップの電極との接合部への集中を防止することができる。 It is possible to prevent the concentration of the junction between the inner lead and the semiconductor chip electrodes of the thermal stress.

【0009】 [0009]

【実施例】以下、本発明樹脂封止型半導体装置を図示実施例に従って詳細に説明する。 EXAMPLES Hereinafter, will be described in detail with reference to the illustrated embodiment of the present invention the resin-encapsulated semiconductor device. 図1(A)、(B)は本発明樹脂封止型半導体装置の一つの実施例を示すもので、(A)は斜視図、(B)は(A)のB−B線視断面図である。 Figure 1 (A), (B) intended to show one embodiment of the present invention the resin-sealed semiconductor device, (A) is a perspective view, (B) is the line B-B sectional view of (A) it is. 本実施例は、図5(A)、(B)に示した樹脂封止型半導体装置の従来例とは、半導体チップ1の各電極2に接続したインナーリード4を外側に行くに従って該半導体チップ1から離れる方向に斜めに延びるように形成した点及び各インナーリード4のアウターリード6と接続された端部表面が封止樹脂6から露出せしめられてなることを特徴とする点で相違するが、それ以外の点では共通し、共通点については既に説明済みなのでその説明は省略し、相違する点についてのみ説明する。 This embodiment, the semiconductor chip according to FIG. 5 (A), the a conventional resin-sealed semiconductor device shown in (B) goes to the inner lead 4 connected to the electrodes 2 of the semiconductor chip 1 to the outside While connected end surfaces point is formed so as to extend obliquely in a direction away from the first and the outer lead 6 of the inner leads 4 are different in that, characterized by comprising been brought exposed from the sealing resin 6 , common than other points, the description thereof is omitted already so already described for the common points, a description will be given only differences from. また、全図を通して共通部分には共通の符号を使用した。 Further, the common parts throughout the drawings using the same reference numerals.

【0010】本樹脂封止型半導体装置のインナーリード4は、バンプ3を介して半導体チップ1の電極2に接続された内端から外側へ行くに従って半導体チップ1から離れる方向に斜めに、即ち斜め上方に延びるように形成されている。 [0010] The inner leads 4 of the resin-sealed semiconductor device, obliquely in a direction away from the semiconductor chip 1 in accordance with the inner end connected to the electrode 2 of the semiconductor chip 1 via the bumps 3 to go outside, i.e. diagonal It is formed to extend upward. そして、インナーリード4の外端は、下面が中間材5を介してアウターリード6の上面に接続されており、上面が封止樹脂7の上面と同一平面を成すように露出せしめられている。 Then, the outer end of the inner lead 4, the lower surface is connected to the upper surface of the outer lead 6 through the intermediate member 5, the upper surface is made to expose so as to form an upper surface flush with the sealing resin 7.

【0011】従って、本樹脂封止型半導体装置によれば、先ず第1に、インナーリード4が内端から外側へ行くに従って半導体チップ1から離れる方向に斜めに、即ち斜め上方に延びるように形成されているので、インナーリード4と半導体チップ1のエッジとのショート事故が生じにくい。 [0011] Therefore, according to this resin-sealed semiconductor device, first of, formed as slanted in a direction away from the semiconductor chip 1 in accordance with the inner lead 4 goes from the inner end to the outer, i.e. extend obliquely upwards because it is a short accident between the edge inner lead 4 and the semiconductor chip 1 is unlikely to occur. 尚、斜め上方に延びるインナーリード4 Incidentally, the inner lead 4 extending obliquely upward
の半導体チップ1表面に対する角度θは図1の樹脂封止型半導体装置の各別の変形例を示す図2(A)、(B) The angle θ of the semiconductor chip 1 surface Figure shows each another variation of the resin-encapsulated semiconductor device of FIG. 1 2 (A), (B)
のように小さくしたり大きくしたり任意に選択することができる。 It can be selected to reduce or increase or any like.

【0012】第2に、インナーリード4が半導体チップ1の平面方向と平行に延びるのではなく斜め上方に延びるように形成されているのでインナーリード4のバンプ3を介して半導体チップ1の電極2との接合部に熱ストレスがかかる虞れはない。 [0012] Second, the inner lead 4 are electrodes 2 of the semiconductor chip 1 via the bumps 3 of the inner lead 4 is formed so as to extend obliquely upward rather than extending parallel to the planar direction of the semiconductor chip 1 thermal stress is applied possibility is not at the junction of the. 即ち、半導体チップ1の線熱膨張係数は2.3×10 -6 /℃、封止樹脂7の線熱膨張係数は2.0×10 -5 /℃、インナーリード(銅)の線熱膨張係数は1.7×10 -5 /℃であり、半導体チップ1とインナーリード4との間には線熱膨張係数に相当に大きな差がある。 That is, the linear thermal expansion coefficient of the semiconductor chip 1 is 2.3 × 10 -6 / ℃, linear thermal expansion coefficient of the sealing resin 7 2.0 × 10 -5 / ℃, linear thermal expansion of the inner leads (copper) coefficient is 1.7 × 10 -5 / ℃, there is a large difference in equivalent to the coefficient of linear thermal expansion between the semiconductor chip 1 and the inner lead 4.

【0013】従って、図3(B)に示す従来のようにインナーリード4が半導体チップ1の平面方向と平行に延びている場合には、熱ストレスがインナーリード4と半導体チップ1の接合点にもろに加わり、その接合点及びその近傍に不良が発生し易くなる。 [0013] Therefore, when the inner lead 4 as a conventional case shown in FIG. 3 (B) extends parallel to the planar direction of the semiconductor chip 1, the thermal stress at the junction of the inner lead 4 and the semiconductor chip 1 all the way applied, failure tends to occur in the junction and the vicinity thereof. しかるに、本樹脂封止型半導体装置によればインナーリード4が斜め上方に延びているので、線熱膨張係数の違いによる熱ストレスが半導体チップ1の平面方向と平行に作用したとき図3 However, since according to this resin-sealed semiconductor device inner leads 4 extend obliquely upward, when the thermal stress due to a difference in linear thermal expansion coefficient is applied parallel to the planar direction of the semiconductor chip 1 3
(A)に示すようにインナーリード4が撓み度合を変える変形によってその熱ストレスを吸収することができ、 As shown in (A) by deformation changing the deflection degree inner lead 4 can absorb the thermal stress,
延いては熱ストレスがインナーリード4と半導体チップ1の接合点に集中することを回避することできる。 In its turn, it can be avoided that heat stress is concentrated to the junction of the inner lead 4 and the semiconductor chip 1.

【0014】そして、インナーリード4の外端部上面が封止樹脂7から露出した構造を採っているので、封止樹脂7を徒らに厚くすることなく上述したインナーリード4と半導体チップ1のエッジとのショート防止効果、熱ストレス吸収効果を得ることができる。 [0014] Then, the inner lead 4 since the outer end portion upper face takes the exposed structure from the sealing resin 7, the inner lead 4 and the semiconductor chip 1 described above without increasing the sealing resin 7 to the tiger short-circuit prevention effect between the edge, it is possible to obtain a thermal stress absorbing effect.

【0015】図4は本発明樹脂封止型半導体装置の他の実施例を示す断面図である。 [0015] FIG. 4 is a sectional view showing another embodiment of the present invention the resin-encapsulated semiconductor device. 本実施例は半導体チップ1 This embodiment semiconductor chip 1
の底面が露出した点でのみ図1に示す実施例と異なっている。 Bottom of is different from the embodiment shown only in FIG. 1 in that the exposed. 本実施例によれば半導体チップ1の底面が露出するようにしたので封止樹脂7の厚さをより薄くすることができ、樹脂封止型半導体装置のより一層の薄型化を図ることが可能になると共に、半導体チップ1内で発生した熱を底面から直接外部に放熱することができ、より放熱性を高めることができる。 Since the bottom surface of the semiconductor chip 1 according to this embodiment is to expose it is possible to further reduce the thickness of the sealing resin 7, it is possible to achieve further thinning of a resin sealed semiconductor device together becomes, the heat generated in the semiconductor chip within 1 can be radiated directly to the outside from the bottom surface, it is possible to enhance the heat dissipation.

【0016】 [0016]

【発明の効果】請求項1の樹脂封止型半導体装置は、半導体チップの各電極に接続したインナーリードを外側に行くに従って該半導体チップから離れる方向に斜めに延びるように形成したことを特徴とするものである。 [Effect of the Invention The resin-sealed semiconductor device according to claim 1, and characterized by forming so as to extend obliquely in a direction away from the semiconductor chip toward the inner leads connected to the electrodes of the semiconductor chip to the outside it is intended to. 従って、請求項1の樹脂封止型半導体装置によれば、インナーリードが外側に行くに従って該半導体チップから離れる方向に斜めに延びているので、半導体チップのエッジとショートする虞れがなくなるし、また、熱ストレスをインナーリードが曲ることによって吸収して熱ストレスのインナーリードと半導体チップの電極との接合部への集中を防止することができる。 Therefore, according to the resin-encapsulated semiconductor device according to claim 1, since the inner lead extends obliquely in a direction away from the semiconductor chip toward the outside, to fear disappears a short circuit and the edge of the semiconductor chip, Further, it is possible to heat stress is absorbed by the inner lead flexes to prevent the concentration of the junction between the inner lead and the semiconductor chip electrodes of the thermal stress.

【0017】請求項2の樹脂封止型半導体装置は、各インナーリードのアウターリードと接続された端部表面が封止樹脂から露出せしめられてなることを特徴とする。 The resin-sealed semiconductor device according to claim 2, outer leads and connected to end surfaces of the inner leads is characterized by comprising been brought exposed from the sealing resin.
従って、請求項2の樹脂封止型半導体装置によれば、インナーリードの外端を露出せしめたので封止樹脂を徒らに厚くすることなく半導体チップのエッジとインナーリードとのショート不良防止、熱ストレスのインナーリードと半導体チップの電極との接合部への集中を防止することができる。 Therefore, according to the resin-encapsulated semiconductor device according to claim 2, short circuit prevention between the semiconductor chip edge and the inner lead without increasing the sealing resin taken since allowed exposed outer ends of inner leads, it is possible to prevent the concentration of the junction between the inner lead and the semiconductor chip electrodes of the thermal stress.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】(A)、(B)は本発明樹脂封止型半導体装置の一つの実施例を示すもので、(A)は斜視図、(B) [1] (A), (B) intended to show one embodiment of the present invention the resin-sealed semiconductor device, (A) is a perspective view, (B)
は(A)のB−B線視断面図である。 It is a B-B line sectional view of (A).

【図2】(A)、(B)は図1の樹脂封止型半導体装置の各別の変形例を示す断面図である。 [2] (A), it is a sectional view showing each another variation of (B) is a resin sealed semiconductor device in FIG.

【図3】(A)、(B)は本発明樹脂封止型半導体装置の熱ストレス吸収効果を従来の樹脂封止型半導体装置の場合と比較して説明する断面図、(A)は本発明の場合を、(B)は従来例の場合を示す。 [3] (A), (B) are cross-sectional views for explaining a thermal stress absorbing effect of the present invention the resin-sealed semiconductor device as compared with the conventional resin-sealed semiconductor device, (A) is present the case of the invention, (B) shows the case of a conventional example.

【図4】本発明樹脂封止型半導体装置の他の実施例を示す断面図である。 It is a sectional view showing another embodiment of the present invention; FIG resin-sealed semiconductor device.

【図5】(A)、(B)は従来例を示し、(A)は斜視図、(B)は(A)のB−B線視断面図である。 [5] (A), (B) shows a conventional example, (A) is a perspective view, (B) is a B-B line sectional view of (A).

【符号の説明】 DESCRIPTION OF SYMBOLS

1 半導体チップ 2 電極 4 インナーリード 6 アウターリード 7 封止樹脂 1 semiconductor chip 2 electrode 4 inner leads 6 outer leads 7 sealing resin

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 半導体チップの各電極に内端が接続されたインナーリードが外側へ行くに従って上記半導体チップから離れる方向に斜めに延び、 各インナーリードの外端部にアウターリードが接続されたことを特徴とする樹脂封止型半導体装置 1. A the semiconductor chip inner lead inner end being connected to each electrode of extending obliquely in a direction away from said semiconductor chip toward the outside, the outer leads are connected to the outer end of each inner lead resin-sealed semiconductor device according to claim
  2. 【請求項2】 各インナーリードのアウターリードと接続された端部表面が封止樹脂から露出せしめられてなることを特徴とする請求項1記載の樹脂封止型半導体装置 2. A resin-sealed semiconductor device according to claim 1, wherein the outer lead with the connected end surfaces of the inner leads is characterized by comprising been brought exposed from the sealing resin
JP27241392A 1992-09-14 1992-09-14 Resin-sealed semiconductor device Expired - Fee Related JP3232696B2 (en)

Priority Applications (1)

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JP27241392A JP3232696B2 (en) 1992-09-14 1992-09-14 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27241392A JP3232696B2 (en) 1992-09-14 1992-09-14 Resin-sealed semiconductor device

Publications (2)

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JPH0697352A true JPH0697352A (en) 1994-04-08
JP3232696B2 JP3232696B2 (en) 2001-11-26

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Country Link
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US6716670B1 (en) 2002-01-09 2004-04-06 Bridge Semiconductor Corporation Method of forming a three-dimensional stacked semiconductor package device
US6936495B1 (en) 2002-01-09 2005-08-30 Bridge Semiconductor Corporation Method of making an optoelectronic semiconductor package device
US6987034B1 (en) 2002-01-09 2006-01-17 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes singulating and trimming a lead
US7190060B1 (en) 2002-01-09 2007-03-13 Bridge Semiconductor Corporation Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same

Cited By (11)

* Cited by examiner, † Cited by third party
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US6716670B1 (en) 2002-01-09 2004-04-06 Bridge Semiconductor Corporation Method of forming a three-dimensional stacked semiconductor package device
US6774659B1 (en) 2002-01-09 2004-08-10 Bridge Semiconductor Corporation Method of testing a semiconductor package device
US6803651B1 (en) 2002-01-09 2004-10-12 Bridge Semiconductor Corporation Optoelectronic semiconductor package device
US6891276B1 (en) * 2002-01-09 2005-05-10 Bridge Semiconductor Corporation Semiconductor package device
US6908794B1 (en) 2002-01-09 2005-06-21 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes a conductive trace with recessed and non-recessed portions
US6936495B1 (en) 2002-01-09 2005-08-30 Bridge Semiconductor Corporation Method of making an optoelectronic semiconductor package device
US6987034B1 (en) 2002-01-09 2006-01-17 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes singulating and trimming a lead
US6989295B1 (en) 2002-01-09 2006-01-24 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes an insulative housing with first and second housing portions
US6989584B1 (en) 2002-01-09 2006-01-24 Bridge Semiconductor Corporation Semiconductor package device that includes a conductive trace with a routing line, a terminal and a lead
US7009309B1 (en) 2002-01-09 2006-03-07 Bridge Semiconductor Corporation Semiconductor package device that includes an insulative housing with a protruding peripheral portion
US7190060B1 (en) 2002-01-09 2007-03-13 Bridge Semiconductor Corporation Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same

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