JPS5732676A - High power gaas field effect transistor - Google Patents

High power gaas field effect transistor

Info

Publication number
JPS5732676A
JPS5732676A JP10868380A JP10868380A JPS5732676A JP S5732676 A JPS5732676 A JP S5732676A JP 10868380 A JP10868380 A JP 10868380A JP 10868380 A JP10868380 A JP 10868380A JP S5732676 A JPS5732676 A JP S5732676A
Authority
JP
Japan
Prior art keywords
drain
parts
electrode
gate electrodes
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10868380A
Other languages
Japanese (ja)
Other versions
JPS6241433B2 (en
Inventor
Masaaki Nakatani
Mutsuyuki Otsubo
Yasuro Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10868380A priority Critical patent/JPS5732676A/en
Publication of JPS5732676A publication Critical patent/JPS5732676A/en
Publication of JPS6241433B2 publication Critical patent/JPS6241433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a high power by a GaAs field effect transistor in high frequencies by metallizing the dielectric material deposited partly on the surfaces of drain and gate electrodes and pressing the metallized parts to a heat sink simultaneously with a source electrode. CONSTITUTION:A source electrode 2, a drain electrode 3 and a Schottky metallic gate electrode 4 are formed on a GaAs wafer 1. Bonding pads 22, 33, 44 are respectively formed by Au plating on parts of the source, drain and gate electrodes 2, 3, 4. Further, a dielectric part 7 and conductive metallic parts 37, 47 are respectively formed on the parts of the drain and gate electrodes 3, 4. A GaAs FET chip thus formed is thermally pressed to a package mount formed of a Cu heat sink 5 of flip chip type plated with Au and a dielectric unit formed with an electrode pattern for bonding on the upper surface with the lower surface metallized, with the surface disposed at the lower side.
JP10868380A 1980-08-06 1980-08-06 High power gaas field effect transistor Granted JPS5732676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10868380A JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10868380A JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Publications (2)

Publication Number Publication Date
JPS5732676A true JPS5732676A (en) 1982-02-22
JPS6241433B2 JPS6241433B2 (en) 1987-09-02

Family

ID=14491013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10868380A Granted JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Country Status (1)

Country Link
JP (1) JPS5732676A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10220396A1 (en) * 2002-05-07 2003-11-27 Infineon Technologies Ag Structure for a semiconductor component has a semiconductor area with a comparatively high heat conductivity and a Schottky contact area
US7026719B2 (en) * 2003-02-26 2006-04-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with a heat spreader
EP0860024A4 (en) * 1995-11-08 2006-10-25 Endwave Corp Circuit structure having a flip-mounted matrix of devices
CN102201449A (en) * 2011-05-27 2011-09-28 电子科技大学 Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device
CN104779212A (en) * 2014-01-09 2015-07-15 英飞凌科技股份有限公司 Semiconductor packaging arrangement

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860024A4 (en) * 1995-11-08 2006-10-25 Endwave Corp Circuit structure having a flip-mounted matrix of devices
EP0885457A4 (en) * 1995-11-08 2007-06-13 Endwave Corp Method for making a circuit structure having a flip-mounted matrix of devices
DE10220396A1 (en) * 2002-05-07 2003-11-27 Infineon Technologies Ag Structure for a semiconductor component has a semiconductor area with a comparatively high heat conductivity and a Schottky contact area
DE10220396B4 (en) * 2002-05-07 2007-08-23 Infineon Technologies Ag Power semiconductor component arrangement
US7026719B2 (en) * 2003-02-26 2006-04-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with a heat spreader
CN102201449A (en) * 2011-05-27 2011-09-28 电子科技大学 Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device
CN104779212A (en) * 2014-01-09 2015-07-15 英飞凌科技股份有限公司 Semiconductor packaging arrangement

Also Published As

Publication number Publication date
JPS6241433B2 (en) 1987-09-02

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