JPS53107283A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS53107283A
JPS53107283A JP2148277A JP2148277A JPS53107283A JP S53107283 A JPS53107283 A JP S53107283A JP 2148277 A JP2148277 A JP 2148277A JP 2148277 A JP2148277 A JP 2148277A JP S53107283 A JPS53107283 A JP S53107283A
Authority
JP
Japan
Prior art keywords
thyristor
substrate
groves
thickly
shallow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2148277A
Other languages
Japanese (ja)
Inventor
Shotaro Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2148277A priority Critical patent/JPS53107283A/en
Publication of JPS53107283A publication Critical patent/JPS53107283A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To form mesa groves shallow, prevent damaging by cracking of substrate and produce a thyristor of good characteristics by forming the N type base layer of PNPN construction thickly at substrate circumferential part.
JP2148277A 1977-03-02 1977-03-02 Thyristor Pending JPS53107283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2148277A JPS53107283A (en) 1977-03-02 1977-03-02 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2148277A JPS53107283A (en) 1977-03-02 1977-03-02 Thyristor

Publications (1)

Publication Number Publication Date
JPS53107283A true JPS53107283A (en) 1978-09-19

Family

ID=12056182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2148277A Pending JPS53107283A (en) 1977-03-02 1977-03-02 Thyristor

Country Status (1)

Country Link
JP (1) JPS53107283A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066469A (en) * 1983-09-21 1985-04-16 Toshiba Corp Semiconductor device
EP0725444A1 (en) * 1995-02-03 1996-08-07 Hitachi, Ltd. Thyristor device and method of manufacturing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066469A (en) * 1983-09-21 1985-04-16 Toshiba Corp Semiconductor device
EP0725444A1 (en) * 1995-02-03 1996-08-07 Hitachi, Ltd. Thyristor device and method of manufacturing same

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