JPS52116080A - Transistor - Google Patents

Transistor

Info

Publication number
JPS52116080A
JPS52116080A JP3293576A JP3293576A JPS52116080A JP S52116080 A JPS52116080 A JP S52116080A JP 3293576 A JP3293576 A JP 3293576A JP 3293576 A JP3293576 A JP 3293576A JP S52116080 A JPS52116080 A JP S52116080A
Authority
JP
Japan
Prior art keywords
emitter
transistor
aid
dividing
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3293576A
Other languages
Japanese (ja)
Other versions
JPS5526626B2 (en
Inventor
Shigeaki Nawata
Masaaki Kobayashi
Kazuo Yajima
Shigeo Iwazawa
Koji Takahashi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3293576A priority Critical patent/JPS5526626B2/ja
Publication of JPS52116080A publication Critical patent/JPS52116080A/en
Publication of JPS5526626B2 publication Critical patent/JPS5526626B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To avoid occurrence of a secondary breakdown phenomenon during switching by dividing a P type base layer into two parts with the aid of a N type emitter layer formed to a closed belt-like shape to form an emitter-terminal junction zone and a conductive portion as predetermined.
COPYRIGHT: (C)1977,JPO&Japio
JP3293576A 1976-03-25 1976-03-25 Expired JPS5526626B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3293576A JPS5526626B2 (en) 1976-03-25 1976-03-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3293576A JPS5526626B2 (en) 1976-03-25 1976-03-25

Publications (2)

Publication Number Publication Date
JPS52116080A true JPS52116080A (en) 1977-09-29
JPS5526626B2 JPS5526626B2 (en) 1980-07-15

Family

ID=12372780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3293576A Expired JPS5526626B2 (en) 1976-03-25 1976-03-25

Country Status (1)

Country Link
JP (1) JPS5526626B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216139A (en) * 1992-11-09 1994-08-05 Delco Electron Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216139A (en) * 1992-11-09 1994-08-05 Delco Electron Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5526626B2 (en) 1980-07-15

Similar Documents

Publication Publication Date Title
JPS52156576A (en) Production of mis semiconductor device
JPS5432982A (en) Manufacture of gate turn off thyristor
JPS5353979A (en) Transistor
JPS52116080A (en) Transistor
JPS524787A (en) Transistor containing embedded base
JPS538072A (en) Semiconductor device
JPS5368174A (en) Lateral transistor
JPS52129380A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS5366384A (en) Thyristor
JPS5269275A (en) Transistor
JPS5326683A (en) Manufacture of semiconductor devic e
JPS533071A (en) Semiconductor device
JPS52155981A (en) Thyristor device
JPS53102669A (en) Manufacture for semiconductor device
JPS5217773A (en) Thyristor
JPS5338984A (en) Manufacture of semiconductor device
JPS5353255A (en) Manufacture of semiconductor device
JPS53145483A (en) Semiconductor device and production of the same
JPS538071A (en) Semiconductor device
JPS51123071A (en) Fabrication technique of semiconductor device
JPS5419679A (en) Thyristor
JPS53147467A (en) Production of semiconductor device
JPS5317283A (en) Production of semiconductor device
JPS51141583A (en) Method for producing an electrode for use semiconductor units